13
LTC3830/LTC3830-1
3830fa
The LTC3830/LTC3830-1 overcomes this problem by
sensing the PV
CC1
voltage when G1 is high. If PV
CC1
is less
than (V
CC
+ 2.5V), the maximum G1 duty cycle is reduced
to 70% by clamping the COMP pin at 1.8V (QC in BLOCK
DIAGRAM). This increases the G2 on time and allows the
charge pump capacitor to be refreshed.
For Applications using an external supply to power PV
CC1
,
this supply must also be higher than V
CC
by at least 2.5V
to insure normal operation.
For applications with a 5V or higher V
IN
supply, PV
CC2
can
be tied to V
IN
if a logic level MOSFET is used. PV
CC1
can be
supplied using a doubling charge pump as shown in Figure
9. This circuit provides 2V
IN
– V
F
to PV
CC1
while Q1 is ON.
Figure 12 shows a typical 5V to 3.3V application using a
doubling charge pump to generate PV
CC1
.
Power MOSFETs
Two N-channel power MOSFETs are required for most
LTC3830 circuits. These should be selected based
primarily on threshold voltage and on-resistance consid-
erations. Thermal dissipation is often a secondary con-
cern in high efficiency designs. The required MOSFET
threshold should be determined based on the available
power supply voltages and/or the complexity of the gate
drive charge pump scheme. In 3.3V input designs where
an auxiliary 12V supply is available to power PV
CC1
and
PV
CC2
, standard MOSFETs with R
DS(ON)
specified at V
GS
= 5V or 6V can be used with good results. The current
drawn from this supply varies with the MOSFETs used
and the LTC3830’s operating frequency, but is generally
less than 50mA.
LTC3830 applications that use 5V or lower V
IN
voltage and
a doubling/tripling charge pump to generate PV
CC1
and
PV
CC2
, do not provide enough gate drive voltage to fully
enhance standard power MOSFETs. Under this condition,
the effective MOSFET R
DS(ON)
may be quite high, raising
the dissipation in the FETs and reducing efficiency. Logic
level FETs are the recommended choice for 5V or lower
voltage systems. Logic level FETs can be fully enhanced
with a doubler/tripling charge pump and will operate at
maximum efficiency.
After the MOSFET threshold voltage is selected, choose the
R
DS(ON)
based on the input voltage, the output voltage,
allowable power dissipation and maximum output current.
In a typical LTC3830 circuit, operating in continuous mode,
the average inductor current is equal to the output load
current. This current flows through either Q1 or Q2 with the
power dissipation split up according to the duty cycle:
DC Q
V
V
DC Q
V
V
VV
V
OUT
IN
OUT
IN
IN OUT
IN
()
()
1
21
=
==
The R
DS(ON)
required for a given conduction loss can now
be calculated by rearranging the relation P = I
2
R.
R
P
DC Q I
VP
VI
R
P
DC Q I
VP
VV I
DS ON Q
MAX Q
LOAD
IN MAX Q
OUT LOAD
DS ON Q
MAX Q
LOAD
IN MAX Q
IN OUT LOAD
()
() ()
()
() ()
()( )
•( )
()( )
(– )( )
1
1
2
1
2
2
2
2
2
2
1
2
==
==
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LTC3830
3830 F09
+
D
Z
12V
1N5242
Q1
L
O
Q2 C
OUT
V
OUT
0.1µF
PV
CC2
OPTIONAL
USE FOR V
IN
7V
MBR0530T1
PV
CC1
G1
G2
V
IN
Figure 9. Doubling Charge Pump
14
LTC3830/LTC3830-1
3830fa
P
MAX
should be calculated based primarily on required
efficiency or allowable thermal dissipation. A typical high
efficiency circuit designed for 5V input and 3.3V at 10A
output might allow no more than 3% efficiency loss at full
load for each MOSFET. Assuming roughly 90% efficiency
at this current level, this gives a P
MAX
value of:
(3.3V)(10A/0.9)(0.03) = 1.1W per FET
and a required R
DS(ON)
of:
R
VW
VA
R
VW
VVA
DS ON Q
DS ON Q
()
()
()(.)
( . )( )
.
()(.)
(–.)( )
.
1
2
2
2
511
33 10
0 017
511
53310
0 032
==
==
Note that the required R
DS(ON)
for Q2 is roughly twice that
of Q1 in this example. This application might specify a
single 0.03 device for Q2 and parallel two more of the
same devices to form Q1. Note also that while the required
R
DS(ON)
values suggest large MOSFETs, the power dissi-
pation numbers are only 1.1W per device or less; large
TO-220 packages and heat sinks are not necessarily
required in high efficiency applications. Siliconix Si4410DY
or International Rectifier IRF7413 (both in SO-8) or Siliconix
SUD50N03-10 (TO-252) or ON Semiconductor
MTD20N03HDL (DPAK) are small footprint surface mount
devices with R
DS(ON)
values below 0.03 at 5V of V
GS
that
work well in LTC3830 circuits. Using a higher P
MAX
value
in the R
DS(ON)
calculations generally decreases the MOSFET
cost and the circuit efficiency and increases the MOSFET
heat sink requirements.
Table 1 highlights a variety of power MOSFETs for use in
LTC3830 applications.
Inductor Selection
The inductor is often the largest component in an LTC3830
design and must be chosen carefully. Choose the inductor
value and type based on output slew rate requirements. The
maximum rate of rise of inductor current is set by the
inductor’s value, the input-to-output voltage differential and
the LTC3830’s maximum duty cycle. In a typical 5V input,
3.3V output application, the maximum rise time will be:
DC V V
LL
A
s
MAX IN OUT
OO
•( ) .
=
µ
1 615
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Table 1. Recommended MOSFETs for LTC3830 Applications
TYPICAL INPUT
R
DS(ON)
CAPACITANCE
PARTS AT 25°C (m) RATED CURRENT (A) C
ISS
(pF) θ
JC
(°C/W) T
JMAX
(°C)
Siliconix SUD50N03-10 19 15 at 25°C 3200 1.8 175
TO-252 10 at 100°C
Siliconix Si4410DY 20 10 at 25°C 2700 150
SO-8 8 at 70°C
ON Semiconductor MTD20N03HDL 35 20 at 25°C 880 1.67 150
DPAK 16 at 100°C
Fairchild FDS6670A 8 13 at 25°C 3200 25 150
S0-8
Fairchild FDS6680 10 11.5 at 25°C 2070 25 150
SO-8
ON Semiconductor MTB75N03HDL 9 75 at 25°C 4025 1 150
DD PAK 59 at 100°C
IR IRL3103S 19 64 at 25°C 1600 1.4 175
DD PAK 45 at 100°C
IR IRLZ44 28 50 at 25°C 3300 1 175
TO-220 36 at 100°C
Fuji 2SK1388 37 35 at 25°C 1750 2.08 150
TO-220
Note: Please refer to the manufacturer’s data sheet for testing conditions and detailed information.
15
LTC3830/LTC3830-1
3830fa
where L
O
is the inductor value in µH. With proper fre-
quency compensation, the combination of the inductor
and output capacitor values determine the transient recov-
ery time. In general, a smaller value inductor improves
transient response at the expense of ripple and inductor
core saturation rating. A 2µH inductor has a 0.81A/µs rise
time in this application, resulting in a 6.2µs delay in
responding to a 5A load current step. During this 6.2µs,
the difference between the inductor current and the output
current is made up by the output capacitor. This action
causes a temporary voltage droop at the output. To
minimize this effect, the inductor value should usually be
in the 1µH to 5µH range for most 5V input LTC3830
circuits. To optimize performance, different combinations
of input and output voltages and expected loads may
require different inductor values.
Once the required value is known, the inductor core type
can be chosen based on peak current and efficiency
requirements. Peak current in the inductor will be equal to
the maximum output load current plus half of the peak-to-
peak inductor ripple current. Ripple current is set by the
inductor value, the input and output voltage and the
operating frequency. The ripple current is approximately
equal to:
I
VV V
fLV
RIPPLE
IN OUT OUT
OSC O IN
=
()()
••
f
OSC
= LTC3830 oscillator frequency = 200kHz
L
O
= Inductor value
Solving this equation with our typical 5V to 3.3V applica-
tion with a 2µH inductor, we get:
(–.).
••
.
53333
200 2 5
28
VVV
kHz H V
A
P
µ
=
-P
Peak inductor current at 10A load:
10A + (2.8A/2) = 11.4A
The ripple current should generally be between 10% and
40% of the output current. The inductor must be able to
withstand this peak current without saturating, and the
copper resistance in the winding should be kept as low as
possible to minimize resistive power loss. Note that in
circuits not employing the current limit function, the
current in the inductor may rise above this maximum
under short-circuit or fault conditions; the inductor should
be sized accordingly to withstand this additional current.
Inductors with gradual saturation characteristics are often
the best choice.
Input and Output Capacitors
A typical LTC3830 design places significant demands on
both the input and the output capacitors. During normal
steady load operation, a buck converter like the LTC3830
draws square waves of current from the input supply at the
switching frequency. The peak current value is equal to the
output load current plus 1/2 the peak-to-peak ripple cur-
rent. Most of this current is supplied by the input bypass
capacitor. The resulting RMS current flow in the input
capacitor heats it and causes premature capacitor failure
in extreme cases. Maximum RMS current occurs with
50% PWM duty cycle, giving an RMS current value equal
to I
OUT
/2. A low ESR input capacitor with an adequate
ripple current rating must be used to ensure reliable
operation. Note that capacitor manufacturers’ ripple cur-
rent ratings are often based on only 2000 hours (3 months)
lifetime at rated temperature. Further derating of the input
capacitor ripple current beyond the manufacturer’s speci-
fication is recommended to extend the useful life of the
circuit. Lower operating temperature has the largest effect
on capacitor longevity.
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LTC3830ES8

Mfr. #:
Manufacturer:
Analog Devices / Linear Technology
Description:
Switching Voltage Regulators LTC3830 - High Power Step-Down Synchronous DC/DC Controllers for Low Voltage Operation
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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