APT40GP90B2DQ2G Datasheet APT40GP90B2DQ2G | P1-P3

050-7491 Rev A 9-2005

APT40GP90B2DQ2(G)

TYPICAL PERFORMANCE CURVES

MAXIMUM RATINGS All Ratings: T

C

= 25°C unless otherwise speciﬁed.

STATIC ELECTRICAL CHARACTERISTICS

Characteristic / Test Conditions

Collector-Emitter Breakdown Voltage (V

GE

= 0V, I

C

= 350µA)

Gate Threshold Voltage (V

CE

= V

GE

, I

C

= 1mA, T

j

= 25°C)

Collector-Emitter On Voltage (V

GE

= 15V, I

C

= 40A, T

j

= 25°C)

Collector-Emitter On Voltage (V

GE

= 15V, I

C

= 40A, T

j

= 125°C)

Collector Cut-off Current (V

CE

= 900V, V

GE

= 0V, T

j

= 25°C)

2

Collector Cut-off Current (V

CE

= 900V, V

GE

= 0V, T

j

= 125°C)

2

Gate-Emitter Leakage Current (V

GE

= ±20V)

Symbol

V

(BR)CES

V

GE(TH)

V

CE(ON)

I

CES

I

GES

Units

Volts

µA

nA

Symbol

V

CES

V

GE

I

C1

I

C2

I

CM

SSOA

P

D

T

J

,T

STG

T

L

APT40GP90B2DQ2(G)

900

±30

101

50

160

160A @ 900V

543

-55 to 150

300

UNIT

Volts

Amps

Watts

°C

Parameter

Collector-Emitter Voltage

Gate-Emitter Voltage

Continuous Collector Current

7

@ T

C

= 25°C

Continuous Collector Current @ T

C

= 110°C

Pulsed Collector Current

1

Switching Safe Operating Area @ T

J

= 150°C

Total Power Dissipation

Operating and Storage Junction Temperature Range

Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.

APT Website - http://www.advancedpower.com

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

MIN TYP MAX

900

3 4.5 6

3.2 3.9

2.7

350

1500

±100

The POWER MOS 7

®

IGBT is a new generation of high voltage power IGBTs. Using Punch

Through Technology this IGBT is ideal for many high frequency, high voltage switching

applications and has been optimized for high frequency switchmode power supplies.

• Low Conduction Loss • SSOA Rated

• Low Gate Charge

• Ultrafast Tail Current shutoff

POWER MOS 7

®

IGBT

®

T-Max

®

G

C

E

C

E

G

900V

APT40GP90B2DQ2

APT40GP90B2DQ2G*

*G Denotes RoHS Compliant, Pb Free Terminal Finish.

050-7491 Rev A 9-2005

APT40GP90B2DQ2(G)

1

Repetitive Rating: Pulse width limited by maximum junction temperature.

2

For Combi devices, I

ces

includes both IGBT and FRED leakages

3

See MIL-STD-750 Method 3471.

4

E

on1

is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current

adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in ﬁgure 21, but with a Silicon Carbide diode.

5

E

on2

is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching

loss. (See Figures 21, 22.)

6

E

off

is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)

7 Continuous current limited by package lead temperature.

APT Reserves the right to change, without notice, the speciﬁcations and information contained h

THERMAL AND MECHANICAL CHARACTERISTICS

UNIT

°C/W

gm

MIN TYP MAX

.23

.61

5.9

Characteristic

Junction to Case (IGBT)

Junction to Case (DIODE)

Package Weight

Symbol

R

θ

JC

R

θ

JC

W

T

DYNAMIC CHARACTERISTICS

Symbol

C

ies

C

oes

C

res

V

GEP

Q

g

Q

ge

Q

gc

SSOA

t

d(on)

t

r

t

d(off)

t

f

E

on1

E

on2

E

off

t

d(on)

t

r

t

d(off)

t

f

E

on1

E

on2

E

off

Test Conditions

Capacitance

V

GE

= 0V, V

CE

= 25V

f = 1 MHz

Gate Charge

V

GE

= 15V

V

CE

= 450V

I

C

= 40A

T

J

= 150°C, R

G

= 4.3Ω, V

GE

=

15V, L = 100µH,V

CE

= 900V

Inductive Switching (25°C)

V

CC

= 600V

V

GE

= 15V

I

C

= 40A

R

G

= 4.3Ω

T

J

= +25°C

Inductive Switching (125°C)

V

CC

= 600V

V

GE

= 15V

I

C

= 40A

R

G

= 4.3Ω

T

J

= +125°C

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate-to-Emitter Plateau Voltage

Total Gate Charge

3

Gate-Emitter Charge

Gate-Collector ("Miller ") Charge

Switching Safe Operating Area

Turn-on Delay Time

Current Rise Time

Turn-off Delay Time

Current Fall Time

Turn-on Switching Energy

4

Turn-on Switching Energy (Diode)

5

Turn-off Switching Energy

6

Turn-on Delay Time

Current Rise Time

Turn-off Delay Time

Current Fall Time

Turn-on Switching Energy

4

Turn-on Switching Energy (Diode)

55

Turn-off Switching Energy

6

MIN TYP MAX

3300

325

35

7.5

145

22

55

160

14

23

90

60

TBD

1350

795

14

23

130

90

TBD

2280

1245

UNIT

pF

V

nC

A

ns

µJ

ns

µJ

050-7491 Rev A 9-2005

APT40GP90B2DQ2(G)

TYPICAL PERFORMANCE CURVES

BV

CES

, COLLECTOR-TO-EMITTER BREAKDOWN V

CE

, COLLECTOR-TO-EMITTER VOLTAGE (V) I

C

, COLLECTOR CURRENT (A) I

C

, COLLECTOR CURRENT (A)

VOLTAGE (NORMALIZED)

I

C,

DC COLLECTOR CURRENT(A) V

CE

, COLLECTOR-TO-EMITTER VOLTAGE (V) V

GE

, GATE-TO-EMITTER VOLTAGE (V) I

C

, COLLECTOR CURRENT (A)

I

C

= 40A

T

J

= 25°C

250µs PULSE

TEST<0.5 % DUTY

CYCLE

160

140

120

100

80

60

40

20

0

200

180

160

140

120

100

80

60

40

20

0

5

4

3

2

1

0

1.10

1.05

1.00

0.95

0.90

0 1 2 3 4 5 6 0 1 2 3 4 5 6

0 2 4 6 8 10 0 20 40 60 80 100 120 140 160

6 8 10 12 14 16 -50 -25 0 25 50 75 100 125

-50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 150

160

140

120

100

80

60

40

20

0

16

14

12

10

8

6

4

2

0

5.0

4.0

3.0

2.0

1.0

0

140

120

100

80

60

40

20

0

V

CE

, COLLECTER-TO-EMITTER VOLTAGE (V) V

CE

, COLLECTER-TO-EMITTER VOLTAGE (V)

FIGURE 1, Output Characteristics(T

J

= 25°C) FIGURE 2, Output Characteristics (T

J

= 125°C)

V

GE

, GATE-TO-EMITTER VOLTAGE (V) GATE CHARGE (nC)

FIGURE 3, Transfer Characteristics FIGURE 4, Gate Charge

V

GE

, GATE-TO-EMITTER VOLTAGE (V) T

J

, Junction Temperature (°C)

FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage FIGURE 6, On State Voltage vs Junction Temperature

T

J

, JUNCTION TEMPERATURE (°C) T

C

, CASE TEMPERATURE (°C)

FIGURE 7, Breakdown Voltage vs. Junction Temperature FIGURE 8, DC Collector Current vs Case Temperature

T

J

= 125°C

T

J

= 25°C

T

J

= -55°C

T

J

= 25°C.

250µs PULSE TEST

<0.5 % DUTY CYCLE

I

C

= 80A

I

C

= 40A

I

C

= 20A

V

GE

= 15V.

250µs PULSE TEST

<0.5 % DUTY CYCLE

I

C

= 80A

I

C

= 40A

I

C

= 20A

T

J

= 125°C

T

J

= 25°C

T

J

= -55°C

T

J

= 125°C

T

J

= 25°C

T

J

= -55°C

V

CE

= 720V

V

CE

= 450V

V

CE

= 180V

Lead Temperature

Limite

d

Lead Temperatur

e

Limite

d

APT40GP90B2DQ2G

APT40GP90B2DQ2G

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