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APT40GP90B2DQ2G

P1-P3P4-P6P7-P9
050-7491 Rev A 9-2005
APT40GP90B2DQ2(G)
V
GE
=15V,T
J
=125°C
V
GE
=15V,T
J
=25°C
V
CE
= 600V
R
G
= 4.3Ω
L = 100µH
SWITCHING ENERGY LOSSES (µJ) E
ON2
, TURN ON ENERGY LOSS (µJ) t
r,
RISE TIME (ns) t
d(ON)
, TURN-ON DELAY TIME (ns)
SWITCHING ENERGY LOSSES (µJ) E
OFF
, TURN OFF ENERGY LOSS (µJ) t
f,
FALL TIME (ns) t
d
(OFF)
, TURN-OFF DELAY TIME (ns)
I
CE
, COLLECTOR TO EMITTER CURRENT (A) I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A) I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current FIGURE 12, Current Fall Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A) I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current FIGURE 14, Turn Off Energy Loss vs Collector Current
R
G
, GATE RESISTANCE (OHMS) T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance FIGURE 16, Switching Energy Losses vs Junction Temperature
V
CE
= 600V
V
GE
= +15V
R
G
= 4.3Ω
R
G
= 4.3Ω, L = 100µH, V
CE
= 600V
V
CE
= 600V
T
J
= 25°C or 125°C
R
G
= 4.3Ω
L = 100µH
20
15
10
5
0
70
60
50
40
30
20
10
0
6000
5000
4000
3000
2000
1000
0
8000
7000
6000
5000
4000
3000
2000
1000
0
140
120
100
80
60
40
20
0
120
100
80
60
40
20
0
3500
3000
2500
2000
1500
1000
500
0
6000
5000
4000
3000
2000
1000
0
V
GE
= 15V
T
J
= 125°C, V
GE
= 15V
T
J
= 25 or 125°C,V
GE
= 15V
T
J
= 25°C, V
GE
= 15V
V
CE
= 600V
V
GE
= +15V
R
G
= 4.3Ω
T
J
= 125°C
T
J
= 25°C
V
CE
= 600V
V
GE
= +15V
R
G
= 4.3Ω
V
CE
= 600V
V
GE
= +15V
T
J
= 125°C
0 20 40 60 80 100 0 20 40 60 80 100
0 20 40 60 80 100 0 20 40 60 80 100
0 20 40 60 80 100 0 20 40 60 80 100
0 10 20 30 40 50 0 25 50 75 100 125
R
G
= 4.3Ω, L = 100µH, V
CE
= 600V
T
J
= 125°C
T
J
= 25°C
E
off,
80A
E
on2,
80A
E
off,
40A
E
on2,
40A
E
off,
20A
E
on2,
20A
E
off,
80A
E
on2,
80A
E
off,
40A
E
on2,
40A
E
off,
20A
E
on2,
20A
050-7491 Rev A 9-2005
APT40GP90B2DQ2(G)
TYPICAL PERFORMANCE CURVES
0.25
0.20
0.15
0.10
0.05
0
Z
θ
JC
, THERMAL IMPEDANCE (°C/W)
0.3
0.7
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
7,000
1,000
500
100
50
10
180
160
140
120
100
80
60
40
20
0
C, CAPACITANCE (
P
F)
I
C
, COLLECTOR CURRENT (A)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) V
CE
, COLLECTOR TO EMITTER VOLTAGE
Figure 17, Capacitance vs Collector-To-Emitter Voltage Figure 18,Minimim Switching Safe Operating Area
0 10 20 30 40 50 0 200 400 600 800 1000
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
10 20 30 40 50 60 70 80
F
MAX
, OPERATING FREQUENCY (kHz)
I
C
, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
T
J
= 125°C
T
C
= 75°C
D = 50 %
V
CE
= 600V
R
G
= 4.3Ω
300
100
50
10
5
C
ies
C
oes
C
res
0.5
0.1
0.05
F
max
= min (f
max
, f
max2
)
0.05
f
max1
=
t
d(on)
+ t
r
+ t
d(off)
+ t
f
P
diss
- P
cond
E
on2
+ E
off
f
max2
=
P
diss
=
T
J
- T
C
R
θJC
Peak T
J
= P
DM
x Z
θJC
+
T
C
Duty Factor D =
t
1
/
t
2
t
2
t
1
P
DM
Note:
D = 0.9
0.0896
0.140
0.0108
0.228
RC MODEL
Case temperature(°C)
Junction
temp (°C)
Power
(watts)
050-7491 Rev A 9-2005
APT40GP90B2DQ2(G)
I
C
A
D.U.T.
V
CE
Figure 21, Inductive Switching Test Circuit
V
CC
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
Figure 22, Turn-on Switching Waveforms and Definitions
Figure 23, Turn-off Switching Waveforms and Definitions
T
J
= 125°C
Collector Current
CollectorVoltage
Gate Voltage
Switching Energy
5%
10%
t
d(on)
90%
10%
t
r
5%
T
J
= 125°C
CollectorVoltage
Collector Current
Gate Voltage
Switching Energy
0
90%
t
d(off)
10%
t
f
90%
APT40DQ100
e1
SAC: Tin, Silver, Copper
T-MAX
®
(B2) Package Outline
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
4.50 (.177) Max
.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Dimensions in Millimeters and (Inches)
2-Plcs.
Collector
(Cathode
)
Emitter
(Anode
)
Gate
Collector
(Cathode)
P1-P3P4-P6P7-P9

APT40GP90B2DQ2G

Mfr. #:
Buy APT40GP90B2DQ2G
Manufacturer:
Microchip / Microsemi
Description:
IGBT Transistors FG, IGBT-COMBI, 900V, TO-247 T-MAX, RoHS
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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