July 1996
NDS8858H
Complementary MOSFET Half Bridge
General Description Features
________________________________________________________________________________
Absolute Maximum Ratings T
A
= 25°C unless otherwise noted
Symbol Parameter N-Channel P-Channel Units
V
DSS
Drain-Source Voltage 30 -30 V
V
GSS
Gate-Source Voltage 20 -20 V
I
D
Drain Current - Continuous (Note 1a &2) 6.3 -4.8 A
- Pulsed 20 20
P
D
Maximum Power Dissipation (Note 1a) 2.5 W
(Single Device) (Note 1b) 1.2
(Note 1c) 1
T
J
,T
STG
Operating and Storage Temperature Range -55 to 150 °C
THERMAL CHARACTERISTICS
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Single Device) (Note 1a)
50 °C/W
R
θ
JC
Thermal Resistance, Junction-to-Case
(Single Device) (Note 1a)
25 °C/W
NDS8858H Rev. C
These Complementary MOSFET half bridge devices are
produced using Fairchild's proprietary, high cell density,
DMOS technology. This very high density process is
especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy
pulses in the avalanche and commutation modes. These
devices are particularly suited for low voltage half bridge
applications or CMOS applications when both gates are
connected together.
N-Channel 6.3A, 30V, R
DS(ON)
=0.035Ω @ V
GS
=10V.
P-Channel -4.8A, -30V, R
DS(ON)
=0.065Ω @ V
GS
=-10V.
High density cell design or extremely low R
DS(ON)
.
High power and current handling capability in a widely used
surface mount package.
Matched pair for equal input capacitance and power capability
.
P-Gate
Vout
Vout
Vout
Vout
V-
V+
N-Gate
© 1997 Fairchild Semiconductor Corporation