NDS8858H

Mfr. #:: NDS8858H
Manufacturer:: ON Semiconductor / Fairchild
Description:: MOSFET CMOSFET Half Bridge
Lifecycle:: New from this manufacturer.
Datasheet:: NDS8858H Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: NDS8858H Datasheet NDS8858H Datasheet (P4-P6)NDS8858H Datasheet (P7-P9)NDS8858H Datasheet (P10-P12)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: ON Semiconductor

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: SO-8

Number of Channels:: 2 Channel

Transistor Polarity:: N-Channel, P-Channel

Vds - Drain-Source Breakdown Voltage:: 30 V

Id - Continuous Drain Current:: 6.3 A

Rds On - Drain-Source Resistance:: 35 mOhms

Vgs - Gate-Source Voltage:: 20 V

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 2.5 W

Configuration:: Dual

Channel Mode:: Enhancement

Packaging:: Reel

Height:: 1.75 mm

Length:: 4.9 mm

Series:: NDS8858H

Transistor Type:: 1 N-Channel, 1 P-Channel

Type:: MOSFET

Width:: 3.9 mm

Brand:: ON Semiconductor / Fairchild

Fall Time:: 10 ns, 19 ns

Product Type:: MOSFET

Rise Time:: 13 ns, 20 ns

Factory Pack Quantity:: 2500

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 29 ns, 40 ns

Typical Turn-On Delay Time:: 12 ns, 9 ns

Part # Aliases:: NDS8858H_NL

Unit Weight:: 0.008127 oz

Tags: NDS8858H, NDS8858, NDS885, NDS88, NDS8, NDS

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NDS8858H Description

***ical: Trans MOSFET N/P-CH 30V 6.3A/4.8A 8-Pin SOIC N T/R

***ark: Dual N/p Channel Mosfet, 30V, Soic, Full Reel; Transistor Polarity:complementary N And P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:6.3A; On Resistance Rds(On):0.035Ohm; Transistor Mounting:surface Mount Rohs Compliant: Yes

***rchild Semiconductor: These Complementary MOSFET half bridge devices are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage half bridge applications or CMOS applications when both gates are connected together.

***Yang: Transistor MOSFET Array Dual N-Channel 30V 5.3A 8-Pin SOIC N T/R - Bulk

***-Wing Technology: Tape & Reel (TR) Surface Mount 2N-Channel (Dual) Dual Mosfet Array 30nC @ 10V 5.3A 900mW 10ns

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:5.3A; On Resistance, Rds(on):0.035ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes

***rchild Semiconductor: These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

*** Source Electronics: MOSFET N/P-CH 30V 7A/5A 8SOIC / Trans MOSFET N/P-CH 30V 7A/5A 8-Pin SOIC T/R

***ure Electronics: Dual N & P-Channel 30 V 0.028 Ohm Surface Mount PowerTrench Mosfet - SOIC-8

*** Stop Electro: Power Field-Effect Transistor, 7A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

***ment14 APAC: MOSFET, DUAL, NP, SO-8; Transistor Polarity:N and P Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):28mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Cont Current Id N Channel 2:7A; Cont Current Id P Channel:5A; Current Id Max:7A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:2; On State Resistance N Channel Max:28mohm; On State Resistance P Channel Max:52mohm; Package / Case:SOIC; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:20A; Pulse Current Idm N Channel 2:20A; Pulse Current Idm P Channel:20A; SMD Marking:FDS8958A; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:1.9V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V

***ure Electronics: ZXMN3A06 Series Dual 30 V 0.035 Ohm N-Channel Enhancement Mode MOSFET - SOIC-8

*** Source Electronics: Trans MOSFET N-CH 30V 6.2A 8-Pin SOIC T/R / MOSFET 2N-CH 30V 4.9A 8-SOIC

***nell: MOSFET, DUAL, N, 30V, SO-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 6.2A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.035ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 2.1W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Continuous Drain Current Id, N Channel: 6.2A; Current Id Max: 6.2A; Drain Source Voltage Vds, N Channel: 30V; Module Configuration: Dual; No. of Transistors: 2; On Resistance Rds(on), N Channel: 0.035ohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pin Configuration: 1(S1), 2(G1),3(S2),4(G2),5+6(D2),7+8(D1); Pulse Current Idm: 30A; Termination Type: Surface Mount Device; Voltage Vds Typ: 30V; Voltage Vgs Rds on Measurement: 10V

***ical: Trans MOSFET N/P-CH 30V 7A/5A 8-Pin SOIC N T/R

***emi: 30V Dual N & P-Channel PowerTrench® MOSFET

***eco: 008, PLASTIC MOLDED, SOIC-8 PKG, NARROW BODY, DUAL DIE

***ark: TAPE REEL / SO8, DUAL NCH & PCH POWER TRENCH MOSFET

***el Electronic: SMALL SIGNAL BIPOLAR TRANSISTOR

***rchild Semiconductor: These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

***(Formerly Allied Electronics): MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.045Ohm;ID -5.8A;SO-8;PD 2.5W;VGS +/-20V

***ure Electronics: Single P-Channel 30 V 0.045 Ohm 59 nC HEXFET® Power Mosfet - SOIC-8

***ineon SCT: -30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

***ark: Mosfet Transistor; Transistor Polarity:p Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2.8A; On Resistance Rds(On):0.07Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; No. Of Pins:8Pins Rohs Compliant: Yes

*** Stop Electro: Power Field-Effect Transistor, 6.7A I(D), 30V, 0.045ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET

***et: Trans MOSFET P-CH -30V -5.8A 8-Pin SO T/R

***des Inc SCT: P-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS

***el Electronic: MOSFET 30V P-Ch Enh Mode 20Vgss 931pF 19.3nC

***ark: Mosfet Bvdss: 25V~30V So-8 T&r 2.5K

***nell: MOSFET, AEC-Q101, P-CH, -5.8A, -30V, SOIC; Transistor Polarity: P Channel; Drain Source Voltage Vds: 30V; Continuous Drain Current Id: 5.8A; On Resistance Rds(on): 0.019ohm; Transistor Mounting: Surface Mount; Rds(on) Test Voltage Vgs: 10V

Market price

Part #	Mfg.	Description	Stock	Price
NDS8858H DISTI # NDS8858HTR-ND	ON Semiconductor	MOSFET N/P-CH 30V 8SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
NDS8858H DISTI # NDS8858HCT-ND	ON Semiconductor	MOSFET N/P-CH 30V 8SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
NDS8858H DISTI # NDS8858HDKR-ND	ON Semiconductor	MOSFET N/P-CH 30V 8SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
NDS8858H DISTI # 34C1625	ON Semiconductor	DUAL N/P CHANNEL MOSFET, 30V, SOIC, FULL REEL,Transistor Polarity:N and P Channel,Continuous Drain Current Id:6.3A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.035ohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:8Pins RoHS Compliant: Yes	0
NDS8858H	Fairchild Semiconductor Corporation	Small Signal Field-Effect Transistor, 6.3A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	19893	1000:$0.5300 500:$0.5500 100:$0.5800 25:$0.6000 1:$0.6500
NDS8858H DISTI # 512-NDS8858H	ON Semiconductor	MOSFET CMOSFET Half Bridge RoHS: Compliant	0
NDS8858H	Fairchild Semiconductor Corporation	6300 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET	640	371:$0.7500 168:$0.8100 1:$1.8000
NDS8858H	National Semiconductor Corporation		1531
NDS8858H	Fairchild Semiconductor Corporation		1959
NDS8858H	Fairchild Semiconductor Corporation		672
NDS8858H	Fairchild Semiconductor Corporation		2286

Image	Part #	Description
	Mfr.#: NDS8434 OMO.#: OMO-NDS8434-ON-SEMICONDUCTOR	MOSFET P-CH 20V 6.5A 8-SOIC
	Mfr.#: NDS8410 OMO.#: OMO-NDS8410-ON-SEMICONDUCTOR	MOSFET N-CH 30V 10A 8-SOIC
	Mfr.#: NDS8425-NL. OMO.#: OMO-NDS8425-NL--1190	New and Original
	Mfr.#: NDS8426A OMO.#: OMO-NDS8426A-ON-SEMICONDUCTOR	MOSFET N-CH 20V 10.5A 8-SOIC
	Mfr.#: NDS8433 OMO.#: OMO-NDS8433-1190	MOSFET Transistor, P-Channel, SO
	Mfr.#: NDS8839 OMO.#: OMO-NDS8839-1190	New and Original
	Mfr.#: NDS8858HNL OMO.#: OMO-NDS8858HNL-1190	New and Original
	Mfr.#: NDS8947 OMO.#: OMO-NDS8947-ON-SEMICONDUCTOR	MOSFET 2P-CH 30V 4A 8-SOIC
	Mfr.#: NDS8947-NL OMO.#: OMO-NDS8947-NL-1190	New and Original
	Mfr.#: NDS8963 OMO.#: OMO-NDS8963-1190	New and Original

NDS8858H

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes