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Document Number: 73444
S09-1398-Rev. C, 20-Jul-09
Vishay Siliconix
SUD50P10-43L
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I
D
= - 250 µA
- 100 V
V
DS
Temperature Coefficient ΔV
DS
/T
J
I
D
= - 250 µA
- 109
mV/°C
V
GS(th)
Temperature Coefficient ΔV
GS(th)
/T
J
5.9
Gate-Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= - 250 µA
- 1 - 3 V
Gate-Source Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= - 100 V, V
GS
= 0 V
- 1
µA
V
DS
= - 100 V, V
GS
= 0 V, T
J
= 55 °C
- 10
On-State Drain Current
a
I
D(on)
V
DS
≥ 5 V, V
GS
= - 10 V
- 40 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= - 10 V, I
D
= - 9.2 A
0.036 0.043
Ω
V
GS
= - 4.5 V, I
D
= - 7.7 A
0.040 0.048
Forward Transconductance
a
g
fs
V
DS
= - 15 V, I
D
= - 9.2 A
38 S
Dynamic
b
Input Capacitance
C
iss
V
DS
= - 50 V, V
GS
= 0 V, f = 1 MHz
4600
pFOutput Capacitance
C
oss
230
Reverse Transfer Capacitance
C
rss
175
Total Gate Charge
Q
g
V
DS
= - 50 V, V
GS
= - 10 V, I
D
= - 9.2 A
106 160
nC
V
DS
= - 50 V, V
GS
= - 4.5 V, I
D
= - 9.2 A
54 81
Gate-Source Charge
Q
gs
14
Gate-Drain Charge
Q
gd
26
Gate Resistance
R
g
f = 1 MHz 4 Ω
Tur n - On D e lay T i me
t
d(on)
V
DD
= - 50 V, R
L
= 6.5 Ω
I
D
≅ - 7.7 A, V
GEN
= - 10 V, R
g
= 1 Ω
15 25
ns
Rise Time
t
r
20 30
Turn-Off Delay Time
t
d(off)
110 165
Fall Time
t
f
100 150
Tur n - On D e lay Ti m e
t
d(on)
V
DD
= - 50 V, R
L
= 6.5 Ω
I
D
≅ - 7.7 A, V
GEN
= - 4.5 V, R
g
= 1 Ω
42 65
ns
Rise Time
t
r
160 240
Turn-Off Delay Time
t
d(off)
100 150
Fall Time
t
f
100 150
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I
S
T
C
= 25 °C
- 50
A
Pulse Diode Forward Current
a
I
SM
- 40
Body Diode Voltage
V
SD
I
S
= - 7.7 A
- 0.8 - 1.2 V
Body Diode Reverse Recovery Time
t
rr
I
F
= - 7.7 A, dI/dt = 100 A/µs, T
J
= 25 °C
60 90 ns
Body Diode Reverse Recovery Charge
Q
rr
150 225 nC
Reverse Recovery Fall Time
t
a
46
ns
Reverse Recovery Rise Time
t
b
14
