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SUD50P10-43L-E3

P1-P3P4-P6P7-P9
www.vishay.com
4
Document Number: 73444
S09-1398-Rev. C, 20-Jul-09
Vishay Siliconix
SUD50P10-43L
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
1.0 1.2
1
10
40
0.0 0.2 0.4 0.6 0.8
T
J
= 25 °C
T
J
= 150 °C
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
- 50 - 25 0 25 50 75 100 125 150 175
I
D
= 250 µA
T
J
- Temperature (°C)
V
GS(th)
(V)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.02
0.03
0.04
0.05
0.06
0.07
0.08
2345678 910
V
GS
- Gate-to-Source Voltage (V)
R
DS(on)
- Drain-to-Source On-Resistance (Ω)
T
A
= 25 °C
T
A
= 125 °C
0
20
35
5
10
Power (W)
Time (s)
25
10 100010.10.01
15
30
100
Safe Operating Area, Junction-to-Ambient
0.001
0.01
0.1
1
10
100
0.1 1 10 100 1000
1ms
100 ms
10 ms
T
A
= 25 °C
Single Pulse
100 µs
DC
BVDSS Limited
10 s
1s
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
- Drain Current (A)
I
D
Limited byR
DS(on)
*
Vishay Siliconix
SUD50P10-43L
Document Number: 73444
S09-1398-Rev. C, 20-Jul-09
www.vishay.com
5
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
Single Pulse Avalance Capability
0
10
20
30
40
50
0 25 50 75 100 125 150 175
I
D
- Drain Current (A)
T
C
- Case Temperature (°C)
100
0.000001 0.0001 0.01
1
10
0.00001
T
A
- Time In Avalanche (s)
I
C
- Peak Avalanche Current (A)
T
A
L I
A
BV - V
DD
0.001
Single Pulse Power, Junction-to-Ambient
0
20
40
60
80
100
120
140
25 50 75 100 125 150 175
T
C
- Case Temperature (°C)
Power
www.vishay.com
6
Document Number: 73444
S09-1398-Rev. C, 20-Jul-09
Vishay Siliconix
SUD50P10-43L
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73444
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-2
000101110
-1
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 65 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Normalized Thermal Transient Impedance, Junction-to-Case
10
-3
10
-2
110
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
0.02
Single Pulse
P1-P3P4-P6P7-P9

SUD50P10-43L-E3

Mfr. #:
Buy SUD50P10-43L-E3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 100V 37A 136W 43mohm @ 10V
Lifecycle:
New from this manufacturer.
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