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IRL3716S

P1-P3P4-P6P7-P9P10-P12
Symbol Parameter Max. Units
V
DS
Drain-Source Voltage 20 V
V
GS
Gate-to-Source Voltage ± 20 V
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 180
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 130 A
I
DM
Pulsed Drain Current 720
P
D
@T
C
= 25°C Maximum Power Dissipation 210 W
P
D
@T
C
= 100°C Maximum Power Dissipation 100 W
Linear Derating Factor 1.4 W/°C
T
J
, T
STG
Junction and Storage Temperature Range -55 to + 175 °C
www.irf.com 1
10/8/04
IRL3716
IRL3716S
IRL3716L
SMPS MOSFET
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
max I
D
20V
Notes through are on page 11
Absolute Maximum Ratings
D
2
Pak
IRL3716S
TO-220AB
IRL3716
TO-262
IRL3716L
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 0.72
R
θCS
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
R
θJA
Junction-to-Ambient ––– 62
R
θJA
Junction-to-Ambient (PCB mount) ––– 40
Applications
Benefits
l Ultra-Low Gate Impedance
l Very Low R
DS(on)
at 4.5V V
GS
l Fully Characterized Avalanche Voltage
and Current
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l High Frequency Buck Converters for
Computer Processor Power
l Active Oring
4.0mΩ
180A
PD - 94403A
IRL3716/3716S/3716L
2 www.irf.com
Symbol Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode)
––– –––
showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode)
––– –––
p-n junction diode.
––– 0.93 1.3 V T
J
= 25°C, I
S
= 72A, V
GS
= 0V
––– 0.80 ––– T
J
= 125°C, I
S
= 72A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 180 280 ns T
J
= 25°C, I
F
= 72A, V
R
=20V
Q
rr
Reverse Recovery Charge ––– 87 130 nC di/dt = 100A/µs
t
rr
Reverse Recovery Time ––– 190 280 ns T
J
= 125°C, I
F
= 72A, V
R
=20V
Q
rr
Reverse Recovery Charge ––– 85 130 nC di/dt = 100A/µs
Parameter Min. Typ. Max.Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 20 ––– ––– V V
GS
= 0V, I
D
= 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
––– 0.021 ––– V/°C Reference to 25°C, I
D
= 1mA
––– 3.0 4.0 V
GS
= 10V, I
D
= 90A
––– 4.0 4.8 V
GS
= 4.5V, I
D
= 72A
V
GS(th)
Gate Threshold Voltage 1.0 ––– 3.0 V V
DS
= V
GS
, I
D
= 250µA
––– ––– 20
µA
V
DS
= 16V, V
GS
= 0V
––– ––– 250 V
DS
= 16V, V
GS
= 0V, T
J
= 125°C
Gate-to-Source Forward Leakage ––– ––– 200 V
GS
= 16V
Gate-to-Source Reverse Leakage ––– ––– -200
nA
V
GS
= -16V
Dynamic @ T
J
= 25°C (unless otherwise specified)
ns
Symbol Parameter Typ. Max. Units
E
AS
Single Pulse Avalanche Energy ––– 640 mJ
I
AR
Avalanche Current ––– 72 A
Avalanche Characteristics
S
D
G
Diode Characteristics
180
720
A
Symbol Parameter Min. Typ. Max. Units Conditions
g
fs
Forward Transconductance 100 ––– ––– S V
DS
= 10V, I
D
= 72A
Q
g
Total Gate Charge ––– 53 79 I
D
= 72A
Q
gs
Gate-to-Source Charge ––– 17 26 nC V
DS
= 16V
Q
gd
Gate-to-Drain ("Miller") Charge ––– 24 35 V
GS
= 4.5V
Q
oss
Output Gate Charge ––– 50 75 V
GS
= 0V, V
DS
= 10V
R
g
Gate Resistance 1.5 Ω
t
d(on)
Turn-On Delay Time ––– 18 ––– V
DD
= 10V
t
r
Rise Time ––– 140 ––– I
D
= 72A
t
d(off)
Turn-Off Delay Time ––– 38 ––– R
G
= 3.9Ω
t
f
Fall Time ––– 36 ––– V
GS
= 4.5V
C
iss
Input Capacitance ––– 5090 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 3440 ––– V
DS
= 10V
C
rss
Reverse Transfer Capacitance ––– 560 ––– ƒ = 1.0MHz
V
SD
Diode Forward Voltage
Static @ T
J
= 25°C (unless otherwise specified)
I
GSS
I
DSS
Drain-to-Source Leakage Current
R
DS(on)
Static Drain-to-Source On-Resistance
mΩ
pF
IRL3716/3716S/3716L
www.irf.com 3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
1
10
100
1000
10000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
2.5V
20µs PULSE WIDTH
Tj = 25°C
VGS
TOP 10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
BOTTOM 2.5V
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
1
10
100
1000
10000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
2.5V
20µs PULSE WIDTH
Tj = 175°C
VGS
TOP 10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
BOTTOM 2.5V
2.0 3.0 4.0 5.0 6.0 7.0 8.0
V
GS
, Gate-to-Source Voltage (V)
10.00
100.00
1000.00
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
Α
)
T
J
= 25°C
T
J
= 175°C
V
DS
= 15V
20µs PULSE WIDTH
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
180A
P1-P3P4-P6P7-P9P10-P12

IRL3716S

Mfr. #:
Buy IRL3716S
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 20V 180A D2PAK
Lifecycle:
New from this manufacturer.
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