IRL3716/3716S/3716L
4 www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
1000
0.2 0.8 1.4 2.0 2.6
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
°
T = 175 C
J
°
0 30 60 90 120 150
0
4
8
12
16
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
I
=
D
72A
V = 16V
DS
1 10 100
V
DS
, Drain-to-Source Voltage (V)
100
1000
10000
100000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Coss
Crss
Ciss
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
1 10 100
V
DS
, Drain-toSource Voltage (V)
1
10
100
1000
10000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R
DS
(on)
100µsec
IRL3716/3716S/3716L
www.irf.com 5
Fig 10a. Switching Time Test Circuit
V
DS
9
0%
1
0%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
V
DS
Pulse Width ≤ 1 µs
Duty Factor 0.1 %
R
D
V
GS
R
G
D.U.T.
4.5V
+
-
V
DD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
25 50 75 100 125 150 175
0
30
60
90
120
150
180
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
LIMITED BY PACKAGE
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
J DM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRL3716/3716S/3716L
6 www.irf.com
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T.
V
D
I
D
I
G
3mA
V
GS
.3µF
50K
.2µF
12V
Same Type as D.U.T.
Current Sampling Resistors
+
-
4.5 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
t
p
V
(BR)DSS
I
AS
R
G
I
AS
0.01
t
p
D.U.T
L
V
DS
+
-
V
DD
DRIVER
A
15V
20V
25 50 75 100 125 150 175
0
330
660
990
1320
1650
Starting Tj, Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
AS
°
I
D
TOP
BOTTOM
29A
51A
72A

IRL3716S

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 20V 180A D2PAK
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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