10
9129AS–DAB–04/08
ATR2732N3
L
4. Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Parameters Symbol Value Unit
Supply voltage V
CC
4.0 V
Operating case temperature T
c
–40 to +100 °C
Storage temperature T
stg
–40 to +150 °C
Maximum RF input power VHF 25 dBm
Maximum RF input power L-band 20 dBm
Notes: 1. The part may not survive all maximums applied simultaneously!
5. Thermal Resistance
Parameters Symbol Value Unit
Junction, case R
thJC
15 K/W
6. Operating Range
Parameters Symbol Value Unit
Supply voltage V
CC
3.0 to 3.5 V
Ambient temperature T
amb
–40 to +85 °C
11
9129AS–DAB–04/08
ATR2732N3
7. Electrical Characteristics
Test conditions (if not otherwise specified): V
CC
= +3.3V, T
amb
= +25°C, 50 input match
No. Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type*
1Power Supply
1.1
Supply voltage of front
end ATR2732N3
V
CC
3.0 3.5 V A
1.2
Supply voltage of
baseband processor
V
Di
1.65 V
CC
VA
1.3 Leakage current, all off I
leak
325µAA
2Power Control
2.1 Power on/off delay 1 µs C
2.2 Power off/on delay 5 ms C
2.3
Supply current L-band
off
Reception only VHF 150 mA A
2.4 Supply current L-band 185 mA A
2.5
Power-off tuning
voltage generation
Tuning generation not
active
140 mA B
2.6
Average current
consumption
80 mA B
3 SPI Bus Interface
3.1 BUS voltage high V
BUSH
V
Di
– 0.36 V
Di
+ 0.3 V A
3.2 BUS voltage low V
BUSL
–0.3 +0.25 V A
3.3 Clock frequency 1 / t
per
2MHzA
3.4 Clock high time (SCK) t
ch
0.4 × t
per
3.5 Clock low time (SCK) t
cl
0.4 × t
per
3.6 Clock enable time t
cet
s
3.7 Data set-up time t
sud
0.4 × t
per
3.8 Hold time MOSI t
hda
0.4 × t
per
4 Reference Crystal Oscillator
4.1 Operating frequency 16 24.576 32 MHz C
4.2 Tuning range 120 210 ppm A
4.3
Reference clock output
voltage
Sine wave output 0.5 V
pp
A
5 VHF Fractional PLL
5.1 LO frequency 200 290 MHz A
6L-band PLL
6.1 LO frequency 1.26 1.27 GHz A
7IF Interface
7.1 IF frequency range 30 38.91 50 MHz D
7.2
Output impedance
(differential)
46, 47 56 100 D
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
12
9129AS–DAB–04/08
ATR2732N3
7.3
Driving capability/
max. load capacitance
(differential)
IFAGCIN+, IFAGCIN–
(pins 45, 48) directly
connected to IF20+,
IF20–
46, 47 5.5 7 pF D
8 VHF Band Operation
8.1 Frequency range f
Rfin
167 240 MHz C
8.4 Sensitivity
8 dB SNR at IF output
to baseband, measured
with sample application
–98 dBm C
8.5
Maximum input power
level
–5 dBm C
9 L-band Operation
9.1 Frequency range f
Rfin
1452 1492 MHz C
9.4 Sensitivity
8 dB SNR at IF output
to baseband, measured
with sample application
–96 dBm C
9.5
Maximum input power
level
–15 dBm C
7. Electrical Characteristics (Continued)
Test conditions (if not otherwise specified): V
CC
= +3.3V, T
amb
= +25°C, 50 input match
No. Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type*
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter

ATR2732N3-PBQW

Mfr. #:
Manufacturer:
Microchip Technology / Atmel
Description:
Audio DSPs Integrated DAB One Chip FE, Cons. Vers.
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet