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ATV06B400J-HF

P1-P3P4-P6P7-P9P10-P12P13-P13
ESD217-B1-02EL
Characteristics
Final Data Sheet 4 Revision 1.1, 2014-11-11
2 Characteristics
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
2.1 Electrical Characteristics at T
A
= 25 °C, unless otherwise specified
Figure 2-1 Definitions of electrical characteristics
Table 2-1 Maximum Ratings at
T
A
= 25 °C, unless otherwise specified
Parameter Symbol Values Unit
ESD air discharge
1)
ESD contact discharge
1)
1) V
ESD
according to IEC61000-4-2
V
ESD
±30
±25
kV
Peak pulse power
2)
P
PK
85 W
Peak pulse current
2)
2) Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC61000-4-5
I
PP
±3 A
Operating temperature range
T
OP
-55 to 125 °C
Storage temperature
T
stg
-65 to 150 °C
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ESD217-B1-02EL
Characteristics
Final Data Sheet 5 Revision 1.1, 2014-11-11
Table 2-2 DC Characteristics at
T
A
= 25 °C, unless otherwise specified
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Reverse working voltage
V
RWM
-8 – 14 V Pin 2 to Pin1
Breakdown voltage
V
BR
14.5
8.5
17
11.5
20
14
V I
R
= 1 mA
Pin2 to Pin1
Pin1 to Pin2
Reverse current
I
R
–<150nAV
R
= 3.3 V
Table 2-3 AC Characteristics at
T
A
= 25 °C, unless otherwise specified
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Line capacitance
C
L
–913pFV
R
= 0 V, f = 1 MHz
Series inductance
L
S
–0.4–nH
Table 2-4 ESD and Surge Characteristics at
T
A
= 25 °C, unless otherwise specified
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Clamping voltage
1)
1) Please refer to Application Note AN210[1]. TLP parameter: Z
0
= 50 Ω , t
p
= 100ns, t
r
= 300ps.
V
CL
–26–VI
TLP
= 16 A, t
p
= 100 ns
–29–
I
TLP
= 30 A, t
p
= 100 ns
Clamping voltage
2)
2) Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC61000-4-5
–25.5– I
PP
= 3 A, t
p
= 8/20 µs,
Pin2 to Pin1
–24–
I
PP
= 3 A, t
p
= 8/20 µs,
Pin1 to Pin2
Dynamic resistance
1)
R
DYN
–0.2–Ω t
p
= 100 ns, Pin2 to Pin1
–0.4–
t
p
= 100 ns, Pin1 to Pin2
ESD217-B1-02EL
Typical Characteristics Diagrams
Final Data Sheet 6 Revision 1.1, 2014-11-11
3 Typical Characteristics Diagrams
Typical characteristics diagrams at T
A
= 25°C, unless otherwise specified
Figure 3-1 Reverse leakage current:
I
R
= f(V
R
), pin 2 to pin 1
Figure 3-2 Line capacitance:
C
L
= f(V
R
), pin 2 to pin 1
10
-13
10
-12
10
-11
10
-10
10
-9
10
-8
10
-7
10
-6
10
-5
10
-4
10
-3
-8 -6 -4 -2 0 2 4 6 8 10 12 14
I
R
[A]
V
R
[V]
0
1
2
3
4
5
6
7
8
9
10
11
12
13
-8 -6 -4 -2 0 2 4 6 8 10 12 14
C
L
[pF]
V
R
[V]
1 MHz
1 GHz
P1-P3P4-P6P7-P9P10-P12P13-P13

ATV06B400J-HF

Mfr. #:
Buy ATV06B400J-HF
Manufacturer:
Comchip Technology
Description:
TVS Diodes / ESD Suppressors 600W 40V UNIDIRECTION AECQ101
Lifecycle:
New from this manufacturer.
Delivery:
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