SIHG20N50C-E3 Datasheet SIHG20N50C-E3 | P1-P3

Document Number: 91382 www.vishay.com

S11-0440-Rev. C, 14-Mar-11 1

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

Power MOSFET

SiHG20N50C

Vishay Siliconix

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• Low Figure-of-Merit R

on

x Q

g

• 100 % Avalanche Tested

• High Peak Current Capability

• dV/dt Ruggedness

• Improved T

rr

/Q

rr

• Improved Gate Charge

• High Power Dissipations Capability

• Compliant to RoHS Directive 2002/95/EC

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.

b. V

DD

= 50 V, starting T

J

= 25 °C, L = 2.5 mH, R

g

= 25 Ω, I

AS

= 17 A.

c. I

SD

≤ 18 A, dI/dt ≤ 380 A/μs, V

DD

≤ V

DS

, T

J

≤ 150 °C.

d. 1.6 mm from case.

e. Limited by maximum junction temperature.

PRODUCT SUMMARY

V

DS

(V) at T

J

max. 560

R

DS(on)

(Ω)V

GS

= 10 V 0.270

Q

g

(Max.) (nC) 76

Q

gs

(nC) 21

Q

gd

(nC) 34

Configuration Single

N-Channel MOSFET

G

D

S

TO-247AC

G

D

S

ORDERING INFORMATION

Package TO-247AC

Lead (Pb)-free SiHG20N50C-E3

Lead (Pb)-free and Halogen-free SiHG20N50C-GE3

ABSOLUTE MAXIMUM RATINGS (T

C

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

DS

500

V

Gate-Source Voltage V

GS

± 30

Continuous Drain Current (T

J

= 150 °C)

e

V

GS

at 10 V

T

C

= 25 °C

I

D

20

AT

C

= 100 °C 11

Pulsed Drain Current

a

I

DM

80

Linear Derating Factor 1.8 W/°C

Single Pulse Avalanche Energy

b

E

AS

361 mJ

Maximum Power Dissipation P

D

250 W

Peak Diode Recovery dV/dt

c

dV/dt 5 V/ns

Operating Junction and Storage Temperature Range T

J

, T

stg

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature) for 10 s 300

d

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

thJA

-40

°C/W

Maximum Junction-to-Case (Drain)

R

thJC

-0.5

www.vishay.com Document Number: 91382

2 S11-0440-Rev. C, 14-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

SiHG20N50C

Vishay Siliconix

The information shown here is a preliminary product proposal, not a commercial product datasheet. Vishay Siliconix is not committed to produce this or any similar

product. This information should not be used for design purposes, nor construed as an offer to furnish or sell such products.

SPECIFICATIONS (T

J

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

DS

V

GS

= 0 V, I

D

= 250 μA 500 - - V

V

DS

Temperature Coefficient

ΔV

DS

/T

J

Reference to 25 °C, I

D

= 1 mA

-700-

mV/°C

Gate-Source Threshold Voltage (N) V

GS(th)

V

DS

= V

GS

, I

D

= 250 μA 3.0 - 5.0 V

Gate-Source Leakage I

GSS

V

GS

= ± 30 V - - ± 100 nA

Zero Gate Voltage Drain Current I

DSS

V

DS

= 500 V, V

GS

= 0 V - - 25

μA

V

DS

= 400 V, V

GS

= 0 V, T

J

= 125 °C - - 250

Drain-Source On-State Resistance R

DS(on)

V

GS

= 10 V I

D

= 10 A - 0.225 0.270 Ω

Forward Transconductance g

fs

V

DS

= 50 V, I

D

= 10 A - 6.4 - S

Dynamic

Input Capacitance C

iss

V

GS

= 0 V,

V

DS

= 25 V,

f = 1.0 MHz

- 2451 2942

pF

Output Capacitance C

oss

- 300 360

Reverse Transfer Capacitance C

rss

-2632

Total Gate Charge Q

g

V

GS

= 10 V I

D

= 18 A, V

DS

= 400 V

-6576

nC Gate-Source Charge Q

gs

-21-

Gate-Drain Charge Q

gd

-29-

Turn-On Delay Time t

d(on)

V

DD

= 250 V, I

D

= 18 A,

R

g

= 9.1 Ω

-80-

ns

Rise Time t

r

-27-

Turn-Off Delay Time t

d(off)

-32-

Fall Time t

f

-44-

Gate Input Resistance R

g

f = 1 MHz, open drain - 1.1 - Ω

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

S

MOSFET symbol

showing the

integral reverse

p - n junction diode

--20

A

Pulsed Diode Forward Current I

SM

--80

Body Diode Voltage V

SD

T

J

= 25 °C, I

S

= 18 A, V

GS

= 0 V - - 1.5 V

Body Diode Reverse Recovery Time t

rr

T

J

= 25 °C, I

F

= I

S

,

dI/dt = 100 A/μs, V = 35 V

-503-ns

Body Diode Reverse Recovery Charge Q

rr

-6.7-μC

Reverse Recovery Current I

RRM

-30-A

S

D

G

Document Number: 91382 www.vishay.com

S11-0440-Rev. C, 14-Mar-11 3

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

SiHG20N50C

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics, T

C

= 25 °C

Fig. 2 - Typical Output Characteristics, T

C

= 150 °C

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

V

DS

, Drain-to-Source Voltage (V)

I

D

, Drain Current (A)

0

10

20

30

40

50

60

70

0612

18

24

30

7.0 V

Bottom

To p

V

GS

15 V

14 V

13 V

12 V

11 V

10 V

9.0 V

8.0 V

7.0 V

6.0 V

5.0 V

T

J

= 25 °C

0

10

20

30

40

0 6 12 18 24 30

7.0 V

V

DS

, Drain-to-Source Voltage (V)

I

D

, Drain Current (A)

Bottom

To p

V

GS

15 V

14 V

13 V

12 V

11 V

10 V

9.0 V

8.0 V

7.0 V

6.0 V

5.0 V

T

J

= 150 °C

I

D

, Drain Current (A)

V

GS

,

Gate-to-Source Voltage (V)

0.01

0.1

1

10

100

5678910

T

J

= 150 °C

T

J

= 25 °C

T

J

,

Junction Temperature (°C)

R

DS(on)

, Drain-to-Source On Resistance

(Normalized)

0

0.5

1

1.5

2

2.5

3

- 60 - 40 - 20 0 20 40 60 80 100 120 140 160

I

D

= 17 A

V

GS

= 10 V

SIHG20N50C-E3

SIHG20N50C-E3

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