www.vishay.com Document Number: 91382
4 S11-0440-Rev. C, 14-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiHG20N50C
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
Fig. 9 - Maximum Drain Current vs. Case Temperature
Capacitance (pF)
V
DS
,
Drain-to-Source Voltage (V)
10
10
2
10
3
10
4
10
5
1101001000
V
GS
= 0 V, f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
Shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
iss
C
rss
C
oss
Q
G
, Total Gate Charge (nC)
V
GS
, Gate-to-Source Voltage (V)
0
4
8
12
16
20
0306090120
I
D
= 17 A
V
DS
= 250 V
V
DS
= 100 V
V
DS
= 400 V
V
SD
, Source-to-Drain Voltage (V)
I
SD
, Reverse Drain Current (A)
0.1
1
10
100
0.2 0.5 0.8 1.1 1.4
T
J
= 150 °C
T
J
= 25 °C
V
GS
= 0 V
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain Current (A)
T
C
= 25 °C
T
J
= 150 °C
Single Pulse
Operation in this area limited
by R
DS(on)
1 ms
10 ms
100 µs
1000
1
10
100
10
100 1000
10 000
0.1
I
D
, Drain Current (A)
T
C
, Case Temperature (°C)
0
5
10
15
20
25 50 75 100 125 150