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MT36KSF2G72PDZ-1G1D1

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P23
DRAM Operating Conditions
Recommended AC operating conditions are given in the DDR3 component data sheets.
Component specifications are available on Micron’s web site. Module speed grades cor-
relate with component speed grades, as shown below.
Table 11: Module and Component Speed Grades
DDR3 components may exceed the listed module speed grades; module may not be available in all listed speed grades
Module Speed Grade Component Speed Grade
-2G1 -093
-1G9 -107
-1G6 -125
-1G4 -15E
-1G1 -187E
-1G0 -187
-80C -25E
-80B -25
Design Considerations
Simulations
Micron memory modules are designed to optimize signal integrity through carefully de-
signed terminations, controlled board impedances, routing topologies, trace length
matching, and decoupling. However, good signal integrity starts at the system level.
Micron encourages designers to simulate the signal characteristics of the system's
memory bus to ensure adequate signal integrity of the entire memory system.
Power
Operating voltages are specified at the DRAM, not at the edge connector of the module.
Designers must account for any system voltage drops at anticipated power levels to en-
sure the required supply voltage is maintained.
8GB, 16GB (x72, ECC, QR) 240-Pin 1.35V DDR3L RDIMM
DRAM Operating Conditions
PDF: 09005aef8490c71e
ksf36c1g_2gx72pdz.pdf - Rev. D 4/13 EN
16
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2011 Micron Technology, Inc. All rights reserved.
I
DD
Specifications
Table 12: DDR3 I
DD
Specifications and Conditions – 8GB (Die Revision K)
Values are for the MT41K256M8 DDR3L SDRAM only and are computed from values specified in the 1.35V 2Gb (256 Meg x
8) component data sheet
Parameter Symbol 1333 1066 Units
Operating current 0: One bank ACTIVATE-to-PRECHARGE I
DD0
1
666 648 mA
Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE I
DD1
1
774 738 mA
Precharge power-down current: Slow exit I
DD2P0
2
432 432 mA
Precharge power-down current: Fast exit I
DD2P1
2
504 504 mA
Precharge quiet standby current I
DD2Q
2
720 720 mA
Precharge standby current I
DD2N
2
756 756 mA
Precharge standby ODT current I
DD2NT
1
585 558 mA
Active power-down current I
DD3P
2
756 756 mA
Active standby current I
DD3N
2
1080 1008 mA
Burst read operating current I
DD4R
1
1062 936 mA
Burst write operating current I
DD4W
1
1089 981 mA
Refresh current I
DD5B
1
1935 1917 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
2
432 432 mA
Self refresh temperature current (SRT-enabled): MAX T
C
= 95°C I
DD6ET
2
540 540 mA
All banks interleaved read current I
DD7
1
1674 1413 mA
RESET low current I
DD8
2
504 504 mA
Notes:
1. One module rank in the active I
DD
, the other ranks in I
DD2P0
(slow exit).
2. All ranks in this I
DD
condition.
8GB, 16GB (x72, ECC, QR) 240-Pin 1.35V DDR3L RDIMM
I
DD
Specifications
PDF: 09005aef8490c71e
ksf36c1g_2gx72pdz.pdf - Rev. D 4/13 EN
17
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2011 Micron Technology, Inc. All rights reserved.
Table 13: DDR3 I
DD
Specifications and Conditions – 16GB (Die Revision D)
Values are for the MT41K512M8 DDR3L SDRAM only and are computed from values specified in the 1.35V 4Gb (512 Meg x
8) component data sheet
Parameter Symbol 1333 1066 Units
Operating current 0: One bank ACTIVATE-to-PRECHARGE I
DD0
1
1125 1080 mA
Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE I
DD1
1
1278 1233 mA
Precharge power-down current: Slow exit I
DD2P0
2
720 720 mA
Precharge power-down current: Fast exit I
DD2P1
2
1152 1080 mA
Precharge quiet standby current I
DD2Q
2
1584 1404 mA
Precharge standby current I
DD2N
2
1620 1512 mA
Precharge standby ODT current I
DD2NT
1
945 900 mA
Active power-down current I
DD3P
2
2088 1908 mA
Active standby current I
DD3N
2
2052 1872 mA
Burst read operating current I
DD4R
1
2016 1863 mA
Burst write operating current I
DD4W
1
1846 1665 mA
Refresh current I
DD5B
1
2430 2385 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
2
792 792 mA
Self refresh temperature current (SRT-enabled): MAX T
C
= 95°C I
DD6ET
2
1008 1008 mA
All banks interleaved read current I
DD7
1
2790 2430 mA
RESET low current I
DD8
2
792 792 mA
Notes:
1. One module rank in the active I
DD
, the other ranks in I
DD2P0
(slow exit).
2. All ranks in this I
DD
condition.
8GB, 16GB (x72, ECC, QR) 240-Pin 1.35V DDR3L RDIMM
I
DD
Specifications
PDF: 09005aef8490c71e
ksf36c1g_2gx72pdz.pdf - Rev. D 4/13 EN
18
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2011 Micron Technology, Inc. All rights reserved.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P23

MT36KSF2G72PDZ-1G1D1

Mfr. #:
Buy MT36KSF2G72PDZ-1G1D1
Manufacturer:
Micron
Description:
MODULE DDR3L SDRAM 16GB 240RDIMM
Lifecycle:
New from this manufacturer.
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