IRF2805PbF
2 www.irf.com
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 55 ––– ––– V V
GS
= 0V, I
D
= 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 0.06 ––– V/°C Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance ––– 3.9 4.7 mΩ V
GS
= 10V, I
D
= 104A
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V V
DS
= 10V, I
D
= 250µA
g
fs
Forward Transconductance 91 ––– ––– S V
DS
= 25V, I
D
= 104A
––– ––– 20
µA
V
DS
= 55V, V
GS
= 0V
––– ––– 250 V
DS
= 55V, V
GS
= 0V, T
J
= 125°C
Gate-to-Source Forward Leakage ––– ––– 200 V
GS
= 20V
Gate-to-Source Reverse Leakage ––– ––– -200
nA
V
GS
= -20V
Q
g
Total Gate Charge ––– 150 230 I
D
= 104A
Q
gs
Gate-to-Source Charge ––– 38 57 nC V
DS
= 44V
Q
gd
Gate-to-Drain ("Miller") Charge ––– 52 78 V
GS
= 10V
t
d(on)
Turn-On Delay Time ––– 14 ––– V
DD
= 28V
t
r
Rise Time ––– 120 ––– I
D
= 104A
t
d(off)
Turn-Off Delay Time ––– 68 ––– R
G
= 2.5Ω
t
f
Fall Time ––– 110 ––– V
GS
= 10V
Between lead,
––– –––
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance ––– 5110 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 1190 ––– pF V
DS
= 25V
C
rss
Reverse Transfer Capacitance ––– 210 ––– ƒ = 1.0MHz, See Fig. 5
C
oss
Output Capacitance ––– 6470 ––– V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
C
oss
Output Capacitance ––– 860 ––– V
GS
= 0V, V
DS
= 44V, ƒ = 1.0MHz
C
oss
eff. Effective Output Capacitance ––– 1600 ––– V
GS
= 0V, V
DS
= 0V to 44V
nH
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance ––– –––
S
D
G
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Starting T
J
= 25°C, L = 0.08mH
R
G
= 25Ω, I
AS
= 104A. (See Figure 12).
I
SD
≤ 104A, di/dt ≤ 240A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 175°C
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Notes:
S
D
G
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode)
––– –––
showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode)
––– –––
p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 1.3 V T
J
= 25°C, I
S
= 104A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 80 120 ns T
J
= 25°C, I
F
= 104A
Q
rr
Reverse Recovery Charge ––– 290 430 nC di/dt = 100A/µs
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
175
700
A
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
