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IRF2805PBF
P1-P3
P4-P6
P7-P9
IRF2805PbF
4
www.irf.com
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
0.2
0.
4
0.6
0.
8
1.0
1.2
1.4
1.6
1.8
V
SD
, Sour
c
e-t
oDr
ai
n Vol
tage
(
V)
0.1
1.0
10.0
100.0
1000.0
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 175°C
V
GS
= 0V
1
10
100
1000
V
DS
, D
r
ai
n-t
oS
our
c
e Vol
tage (
V
)
1
10
100
1000
10000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc
=
2
5
°
C
T
j =
175°C
S
i
ngl
e Pul
s
e
1ms
ec
10ms
ec
O
P
ERAT
IO
N
IN
T
H
IS AREA
LIMIT
E
D B
Y
R
DS
(o
n)
100µsec
1
10
100
V
DS
, D
r
ai
n-t
o-
S
our
c
e Vol
t
age (
V
)
0
2000
4000
6000
8000
10000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Co
s
s
Crs
s
Ci
s
s
V
GS
= 0
V
,
f = 1
M
H
Z
C
is
s
=
C
gs
+ C
gd
, C
ds
SH
O
R
T
ED
C
rs
s
= C
gd
C
os
s
= C
ds
+ C
gd
0
40
80
120
16
0
200
240
Q
G
T
o
tal
G
ate C
harge
(
nC)
0
4
8
12
16
20
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 44V
VDS= 28V
I
D
= 104A
IRF2805PbF
www.irf.com
5
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9.
Maximum Drain Current Vs.
Case Temperature
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
No
t
e
s
:
1. Du
ty factor D =
t / t
2. Peak
T
=
P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rect
angular
Puls
e Durati
on (
sec
)
Thermal
Res
ponse
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D =
0.50
SING
LE PULSE
(TH
ERMA
L RESPON
SE)
25
50
75
100
125
150
175
0
30
60
90
120
150
180
T ,
Cas
e Temp
er
at
ur
e
( C)
I ,
Drai
n Current
(A
)
°
C
D
LI
MI
T
ED BY
PACKAGE
Fig 10.
Normalized On-Resistance
Vs. Temperature
-60
-40
-20
0
20
40
60
80
100
120
140
160
180
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T ,
Junc
ti
on T
emp
er
at
ur
e
( C)
R , Dra
in
-to-
So
urce
On Re
sistan
ce
(Norm
alized)
J
DS(on)
°
V
=
I
=
GS
D
10V
175A
IRF2805PbF
6
www.irf.com
25
50
75
100
125
150
175
0
200
400
600
800
1000
Star
t
ing Tj,
Junc
t
ion Temperatur
e
( C)
E , Singl
e Pulse Avalanc
he Energy (
mJ)
AS
°
I
D
TOP
B
O
TTOM
43A
87A
104A
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T
.
V
DS
I
D
I
G
3mA
V
GS
.3
µ
F
50K
Ω
.2
µ
F
12V
Current
Regulator
Same
Type
as
D.U.T
.
Current
Sampling
Resistors
+
-
10 V
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Basic Gate Charge Waveform
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
Fig 12b.
Unclamped Inductive Waveforms
Fig 12a.
Unclamped Inductive Test Circuit
t
p
V
(BR)DSS
I
AS
Fig 14.
Threshold Voltage Vs. Temperature
R
G
I
AS
0.01
Ω
t
p
D.
U
.T
L
V
DS
+
-
V
DD
DRI
V
ER
A
15V
20V
V
GS
-75
-50
-25
0
25
50
75
100
125
150
175
T
J
, T
emperat
ure (
°C )
1.0
2.0
3.0
4.0
V
G
S
(
t
h
)
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= 250µA
P1-P3
P4-P6
P7-P9
IRF2805PBF
Mfr. #:
Buy IRF2805PBF
Manufacturer:
Infineon Technologies
Description:
MOSFET MOSFT 55V 175A 4.7mOhm 150nC
Lifecycle:
New from this manufacturer.
Delivery:
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IRF2805PBF