Philips Semiconductors
PHX23NQ11T
N-channel TrenchMOS™ standard level FET
Product data Rev. 01 — 14 May 2004 2 of 12
9397 750 13177
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
3. Ordering information
4. Limiting values
[1] External heatsink, connected to mounting base.
Table 2: Ordering information
Type number Package
Name Description Version
PHX23NQ11T TO-220F Plastic single-ended package; isolated heatsink mounted; 1 mounting hole;
3 lead TO-220 ‘full pack’
SOT186A
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage (DC) 25 °C ≤ T
j
≤ 150 °C - 110 V
V
DGR
drain-gate voltage (DC) 25 °C ≤ T
j
≤ 150 °C; R
GS
=20kΩ - 110 V
V
GS
gate-source voltage (DC) - ±20 V
I
D
drain current (DC) T
h
=25°C; V
GS
=10V;Figure 2 and 3
[1]
-16A
T
h
= 100 °C; V
GS
=10V;Figure 2
[1]
- 10.1 A
I
DM
peak drain current T
h
=25°C; pulsed; t
p
≤ 10 µs; Figure 3
[1]
- 64.3 A
P
tot
total power dissipation T
h
=25°C; Figure 1
[1]
- 41.6 W
T
stg
storage temperature −55 +150 °C
T
j
junction temperature −55 +150 °C
Source-drain diode
I
S
source (diode forward) current (DC) T
h
=25°C
[1]
-16A
I
SM
peak source (diode forward) current T
h
=25°C; pulsed; t
p
≤ 10 µs
[1]
- 64.3 A
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
unclamped inductive load; I
D
=14A;
t
p
= 0.1 ms; V
DD
≤ 100 V; R
GS
=50Ω;
V
GS
= 10 V; starting at T
j
=25°C
-93mJ
