Philips Semiconductors
PHX23NQ11T
N-channel TrenchMOS™ standard level FET
Product data Rev. 01 — 14 May 2004 5 of 12
9397 750 13177
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
6. Characteristics
Table 5: Characteristics
T
j
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source breakdown voltage I
D
= 250 µA; V
GS
=0V
T
j
=25°C 110 - - V
T
j
= −55 °C 100 - - V
V
GS(th)
gate-source threshold voltage I
D
= 1 mA; V
DS
=V
GS
; Figure 9 and 10
T
j
=25°C 234V
T
j
= 150 °C 1--V
T
j
= −55 °C - - 4.4 V
I
DSS
drain-source leakage current V
DS
= 100 V; V
GS
=0V
T
j
=25°C --10µA
T
j
= 150 °C - - 500 µA
I
GSS
gate-source leakage current V
GS
= ±10 V; V
DS
= 0 V - 10 100 nA
R
DSon
drain-source on-state resistance V
GS
=10V; I
D
=13A;Figure 7 and 8
T
j
=25°C - 49 70 mΩ
T
j
= 150 °C - 132 189 mΩ
Dynamic characteristics
Q
g(tot)
total gate charge I
D
= 23 A; V
DD
=80V; V
GS
=10V;
Figure 13
-22-nC
Q
gs
gate-source charge - 5 - nC
Q
gd
gate-drain (Miller) charge - 10 - nC
C
iss
input capacitance V
GS
=0V; V
DS
= 25 V; f = 1 MHz;
Figure 11
- 830 - pF
C
oss
output capacitance - 140 - pF
C
rss
reverse transfer capacitance - 85 - pF
t
d(on)
turn-on delay time V
DD
= 50 V; R
L
= 2.2 Ω;
V
GS
=10V;R
G
= 5.6 Ω
-8-ns
t
r
rise time -39-ns
t
d(off)
turn-off delay time - 26 - ns
t
f
fall time -24-ns
Source-drain diode
V
SD
source-drain (diode forward) voltage I
S
= 11 A; V
GS
=0V;Figure 12 - 0.9 1.5 V
t
rr
reverse recovery time I
S
= 11 A; dI
S
/dt = −100 A/µs; V
GS
= 0 V - 64 - ns
Q
r
recovered charge - 120 - nC
