STB11NK50Z - STP11NK50ZFP - STP11NK50Z Electrical ratings
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1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-220
D²PAK
TO-220FP
V
DS
Drain-source voltage (V
GS
= 0) 500 V
V
GS
Gate-source voltage ± 30 V
I
D
Drain current (continuous) at T
C
= 25 °C 10 10
(1)
1. Limited only by maximum temperature allowed
A
I
D
Drain current (continuous) at T
C
=100 °C 6.3 6.3
(1)
A
I
DM
(2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 40 40
(1)
A
P
TOT
Total dissipation at T
C
= 25 °C 125 30 W
Derating factor 1 0.24 W/°C
V
ESD(G-S)
Gate source ESD (HBM-C= 100 pF,
R= 1.5 kΩ)
4000 V
dv/dt
(3)
3. I
SD
≤ 10 A, di/dt ≤ 200 A/µs, V
DD
≤ V
(BR)DSS
, T
j
≤ T
JMAX
.
Peak diode recovery voltage slope 4.5 V/ns
V
ISO
Insulation withstand voltage (DC) -- 2500 V
T
J
T
stg
Operating junction temperature
Storage temperature
-55 to 150 °C
Table 3. Thermal data
Symbol Parameter
Value
Unit
TO-220
D²PAK
TO-220FP
R
thj-case
Thermal resistance junction-case max 1 4.2 °C/W
R
thj-a
Thermal resistance junction-ambient max 62.5 °C/W
T
l
Maximum lead temperature for soldering
purpose
300 °C
Table 4. Avalanche characteristics
Symbol Parameter Value Unit
I
AS
Avalanche current, repetitive or not-
repetitive (pulse width limited by Tj max)
10 A
E
AS
Single pulse avalanche energy
(starting T
J
= 25 °C, I
D
=I
AR
, V
DD
= 50 V)
190 mJ
