STB11NK50Z - STP11NK50ZFP - STP11NK50Z Electrical characteristics
5/16
Table 7. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on delay time
Rise time
V
DD
= 250 V, I
D
=5.5 A,
R
G
= 4.7 Ω, V
GS
=10 V
(see Figure 19)
14.5
18
ns
ns
t
d(off)
t
f
Turn-off delay time
Fall time
V
DD
= 250 V, I
D
=5.5 A,
R
G
= 4.7 Ω, V
GS
=10 V
(see Figure 19)
41
15
ns
ns
t
r(Voff)
t
f
t
c
Off-voltage rise time
Fall time
Cross-over time
V
DD
=400 V, I
D
=11.4 A,
R
G
=4.7 Ω, V
GS
=10 V
(see Figure 19)
11.5
12
27
ns
ns
ns
Table 8. Source drain diode
Symbol Parameter Test conditions Min Typ. Max Unit
I
SD
Source-drain current 10 A
I
SDM
(1)
1. Pulse width limited by safe operating area
Source-drain current (pulsed) 40 A
V
SD
(2)
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward on voltage
I
SD
=10 A, V
GS
=0
1.6 V
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
=10 A,
di/dt = 100 A/µs,
V
DD
=45 V, Tj=150 °C
308
2.4
16
ns
µC
A
Table 9. Gate-source Zener diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
BV
GSO
(1)
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Gate-source breakdown voltage Igs=±1mA (open drain) 30 V
