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TSML1000

P1-P3P4-P6P7-P9
TSML1000, TSML1020, TSML1030, TSML1040
www.vishay.com
Vishay Semiconductors
Rev. 2.1, 13-Mar-14
1
Document Number: 81033
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW
DESCRIPTION
TSML1000 is an infrared, 940 nm emitting diode in GaAlAs
multi quantum well (MQW) technology with high radiant
power and high speed molded in a clear, untinted plastic
package (with lens) for surface mounting (SMD).
FEATURES
• Package type: surface mount
• Package form: GW, RGW, yoke, axial
• Dimensions (L x W x H in mm): 2.5 x 2 x 2.7
• Peak wavelength: λ
p
= 940 nm
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 12°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Versatile terminal configurations
• Package matches with detector TEMT1000
• Floor life: 168 h, MSL 3, acc. J-STD-020
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• For remote control
• Punched tape readers
•Encoder
• Photointerrupters
Note
• Test conditions see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
16852
TSML1000
TSML1030
TSML1040
TSML1020
PRODUCT SUMMARY
COMPONENT I
e
(mW/sr) ϕ (deg) λ
P
(nm) t
r
(ns)
TSML1000 11 ± 12 940 15
TSML1020 11 ± 12 940 15
TSML1030 11 ± 12 940 15
TSML1040 11 ± 12 940 15
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
TSML1000 Tape and reel MOQ: 1000 pcs, 1000 pcs/reel Reverse gullwing
TSML1020 Tape and reel MOQ: 1000 pcs, 1000 pcs/reel Gullwing
TSML1030 Tape and reel MOQ: 1000 pcs, 1000 pcs/reel Yoke
TSML1040 Bulk MOQ: 1000 pcs, 1000 pcs/bulk Axial leads
TSML1000, TSML1020, TSML1030, TSML1040
www.vishay.com
Vishay Semiconductors
Rev. 2.1, 13-Mar-14
2
Document Number: 81033
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current vs. Ambient Temperature
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
R
5V
Forward current I
F
100 mA
Peak forward current t
p
/T = 0.5, t
p
= 100 μs I
FM
200 mA
Surge forward current t
p
= 100 μs I
FSM
1.0 A
Power dissipation P
V
190 mW
Junction temperature T
j
100 °C
Operating temperature range T
amb
-40 to +85 °C
Storage temperature range T
stg
-40 to +100 °C
Soldering temperature t ≤ 5 s T
sd
< 260 °C
Thermal resistance junction/ambient
Soldered on PCB, pad dimensions:
4 mm x 4 mm
R
thJA
400 °C
P - Power Dissipation (mW)
V
0
20
40
60
80
100
120
140
160
180
200
T
amb
- Ambient Temperature (°C)16187
10090 80 70 60 50 40 30 20 10 0
0
20
40
60
80
100
120
16188
I
F
- Forward Current (mA)
0
T
amb
- Ambient Temperature (°C)
90
80
70
60
50
40
30
20
10
100
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
I
F
= 20 mA, t
p
= 20 ms V
F
1.2 1.5 V
I
F
= 1 A, t
p
= 100 μs V
F
2.2 V
Temperature coefficient of V
F
I
F
= 1 mA TK
VF
-1.8 mV/K
Reverse current V
R
= 5 V I
R
10 μA
Junction capacitance V
R
= 0 V, f = 1 MHz, E = 0 C
j
40 pF
Radiant intensity I
F
= 20 mA, t
p
= 20 ms I
e
31115mW/sr
Radiant power I
F
= 100 mA, t
p
= 20 ms φ
e
40 mW
Temperature coefficient of φ
e
I
F
= 20 mA TKφ
e
-0.6 %/K
Angle of half intensity ϕ ± 12 deg
Peak wavelength I
F
= 100 mA λ
p
940 nm
Spectral bandwidth I
F
= 100 mA Δλ 30 nm
Temperature coefficient of λ
p
I
F
= 100 mA TKλ
p
0.2 nm/K
Rise time I
F
= 100 mA t
r
15 ns
Fall time I
F
= 100 mA t
f
15 ns
TSML1000, TSML1020, TSML1030, TSML1040
www.vishay.com
Vishay Semiconductors
Rev. 2.1, 13-Mar-14
3
Document Number: 81033
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 5 - Radiant Intensity vs. Forward Current
Fig. 6 - Radiant Power vs. Forward Current
Fig. 7 - Relative Radiant Intensity/Power vs. Ambient Temperature
Fig. 8 - Relative Radiant Power vs. Wavelength
10
100
1000
10 000
0.01 0.10 1.00 10.00 100.00
t
p
- Pulse Duration (ms)14335
I - Forward Current (mA)
F
t
p
/ T = 0.01
0.05
0.2
0.5
1.0
0.1
0.02
1
10
100
1000
01 23
t
p
= 100 µs
t
p
/T= 0.001
V
F
- Forward Voltage (V)
21534
I
F
- Forward Current (mA)
0.1
1
10
100
1000
1 10 100 1000
I
e
- Radiant Intensity (mW/sr)
I
F
- Forward Current (mA)
t
p
= 100 μs
0.1
1
10
100
1000
1 10 100 1000
Phi
e
- Radiant Power (mW)
I
F
- Forward Current (mA)
t
p
= 100 μs
-10 10
50
0
100
0
0.4
0.8
1.2
1.6
I
e rel
;
140
94 7993
I
F
= 20 mA
Φ
e rel
T
amb
- Ambient Temperature (°C)
0
10
20
30
40
50
60
70
80
90
100
840 880 920 960 1000 1040
λ - Wavelength (nm)
21445
Φ
e rel
- Relative Radiant Power (%)
I
F
= 30 mA
P1-P3P4-P6P7-P9

TSML1000

Mfr. #:
Buy TSML1000
Manufacturer:
Vishay Semiconductors
Description:
Infrared Emitters 5V 35mW 940nm 12 Deg
Lifecycle:
New from this manufacturer.
Delivery:
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