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STGW39NC60VD

P1-P3P4-P6P7-P9P10-P12P13-P15
STGW39NC60VD Electrical characteristics
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2.1 Electrical characteristics (curves)
Figure 2. Output characteristics Figure 3. Transfer characteristics
Figure 4. Transconductance Figure 5. Collector-emitter on voltage vs
temperature
Figure 6. Collector-emitter on voltage vs
collector current
Figure 7. Normalized gate threshold vs
temperature
Electrical characteristics STGW39NC60VD
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Figure 8. Normalized breakdown voltage vs
temperature
Figure 9. Gate charge vs gate-emitter voltage
Figure 10. Capacitance variations Figure 11. Switching losses vs temperature
Figure 12. Switching losses vs gate resistance Figure 13. Switching losses vs collector
current
STGW39NC60VD Electrical characteristics
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2.2 Frequency applications
For a fast IGBT suitable for high frequency applications, the typical collector current vs.
maximum operating frequency curve is reported. That frequency is defined as follows:
f
MAX
= (P
D
- P
C
) / (E
ON
+ E
OFF
)
● The maximum power dissipation is limited by maximum junction to case thermal
resistance:
Equation 1
P
D
= ∆T / R
THJ-C
considering ∆T = T
J
- T
C
= 125 °C - 75 °C = 50 °C
● The conduction losses are:
Figure 14. Thermal impedance Figure 15. Turn-off SOA
Figure 16. Emitter-collector diode
characteristics
Figure 17. I
C
vs. frequency
0
10
20
30
40
50
60
70
80
90
100
110
120
0123456
VFM(V)
Tj=25°C
(Maximum values)
Tj=125°C
(Maximum values)
Tj=125°C
(Maximum values)
Tj=125°C
(Typical values)
Tj=125°C
(Typical values)
IFM(A)
P1-P3P4-P6P7-P9P10-P12P13-P15

STGW39NC60VD

Mfr. #:
Buy STGW39NC60VD
Manufacturer:
STMicroelectronics
Description:
IGBT Transistors N-CHANNEL MFT
Lifecycle:
New from this manufacturer.
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