IXGP30N120B3 Datasheet IXGA30N120B3, IXGP30N120B3 | P1-P3

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

BV

CES

I

C

= 250μA, V

GE

= 0V 1200 V

V

GE(th)

I

C

= 250μA, V

CE

= V

GE

3.0 5.0 V

I

CES

V

CE

= V

CES

, V

GE

= 0V 100 μA

T

J

= 125°C 1 mA

I

GES

V

CE

= 0V, V

GE

= ±20V ±100 nA

V

CE(sat)

I

C

= 30A, V

GE

= 15V, Note 1 2.96 3.5 V

T

J

= 125°C 2.95 V

DS99730B(10/09)

V

CES

= 1200V

I

C110

= 30A

V

CE(sat)

≤≤

≤£ 3.5V

t

fi(typ)

= 204ns

GenX3

TM

1200V

IGBTs

High-Speed Low-Vsat PT

IGBTs 3-20 kHz Switching

Features

z

Optimized for Low Conduction and

Switching Losses

z

Square RBSOA

z

International Standard Packages

Advantages

z

High Power Density

z

Low Gate Drive Requirement

Applications

z

Power Inverters

z

UPS

z

Motor Drives

z

SMPS

z

PFC Circuits

z

Welding Machines

IXGA30N120B3

IXGP30N120B3

IXGH30N120B3

Symbol Test Conditions Maximum Ratings

V

CES

T

C

= 25°C to 150°C 1200 V

V

CGR

T

J

= 25°C to 150°C, R

GE

= 1MΩ 1200 V

V

GES

Continuous ± 20 V

V

GEM

Transient ± 30 V

I

C25

T

C

= 25°C 60 A

I

C110

T

C

= 110°C 30 A

I

CM

T

C

= 25°C, 1ms 150 A

SSOA V

GE

= 15V, T

VJ

= 125°C, R

G

= 5Ω I

CM

= 60 A

(RBSOA) Clamped Inductive Load V

CE

≤ V

CES

P

C

T

C

= 25°C 300 W

T

J

- 55 ... +150 °C

T

JM

150 °C

T

stg

- 55 ... +150 °C

T

L

1.6mm (0.062 in.) from Case for 10s 300 °C

T

SOLD

Plastic Body for 10 seconds 260 °C

M

d

Mounting Torque (TO-220 & TO-247) 1.13/10 Nm/lb.in.

Weight TO-263 2.5 g

TO-220 3.0 g

TO-247 6.0 g

G = Gate C = Collector

E = Emitter Tab = Collector

TO-220 (IXGP)

TO-263 (IXGA)

G

E

G

C

E

TO-247 (IXGH)

G

C

E

C (Tab)

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXGA30N120B3 IXGP30N120B3

IXGH30N120B3

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

g

fs

I

C

= 30A, V

CE

= 10V, Note 1 11 19 S

C

ies

1750 pF

C

oes

V

CE

= 25V, V

GE

= 0V, f = 1MHz 120 pF

C

res

46 pF

Q

g

87 nC

Q

ge

I

C

= 30A, V

GE

= 15V, V

CE

= 0.5 • V

CES

15 nC

Q

gc

39 nC

t

d(on)

16 ns

t

ri

37 ns

E

on

3.47 mJ

t

d(off)

127 200 ns

t

fi

204 380 ns

E

off

2.16 4.0 mJ

t

d(on)

18 ns

t

ri

38 ns

E

on

6.70 mJ

t

d(off)

216 ns

t

fi

255 ns

E

off

5.10 mJ

R

thJC

0.42 °C/W

R

thCS

TO-220 0.50 °C/W

R

thCS

TO-247 0.21 °C/W

Inductive load, T

J

= 25

°°

°C

I

C

= 30A, V

GE

= 15V

V

CE

= 0.8 • V

CES

, R

G

= 5Ω

Notes 2

Inductive load, T

J

= 125

°°

°C

I

C

= 30A,V

GE

= 15V

V

CE

= 0.8 • V

CES

,R

G

= 5Ω

Notes 2

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Notes:

1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

2. Switching times & energy losses may increase for higher V

CE

(Clamp), T

J

or R

G

.

Pins: 1 - Gate 2 - Drain

3 - Source 4 - Drain

TO-220 (IXGP) Outline

TO-247 (IXGH) AD Outline

1 = Gate

2 = Collector

3 = Emitter

TO-263 (IXGA) Outline

1. Gate

2. Collector

3. Emitter

4. Collector

Bottom Side

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.06 4.83 .160 .190

b 0.51 0.99 .020 .039

b2 1.14 1.40 .045 .055

c 0.40 0.74 .016 .029

c2 1.14 1.40 .045 .055

D 8.64 9.65 .340 .380

D1 8.00 8.89 .280 .320

E 9.65 10.41 .380 .405

E1 6.22 8.13 .270 .320

e 2.54 BSC .100 BSC

L 14.61 15.88 .575 .625

L1 2.29 2.79 .090 .110

L2 1.02 1.40 .040 .055

L3 1.27 1.78 .050 .070

L4 0 0.13 0 .005

IXGA30N120B3 IXGP30N120B3

IXGH30N120B3

Fig. 1. Output Characteristics @ T

J

= 25ºC

0

10

20

30

40

50

60

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

V

CE

- Volts

I

C

- Amperes

9V

7V

V

GE

= 15V

13V

11V

Fig. 2. Extended Output Characteristics @ T

J

= 25ºC

0

20

40

60

80

100

120

140

160

180

200

0 3 6 9 12 15 18 21 24 27 30

V

CE

- Volts

I

C

-

Amperes

V

GE

= 15V

7V

11V

9V

13V

Fig. 3. Output Characteristics @ T

J

= 125ºC

0

10

20

30

40

50

60

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

V

CE

- Volts

I

C

- Amperes

7V

9V

V

GE

= 15V

13V

11V

5V

Fig. 4. Dependence of V

CE(sat)

on

JunctionTemperature

0.6

0.8

1.0

1.2

1.4

1.6

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

V

CE(sat)

- Normalized

V

GE

= 15V

I

C

= 60A

I

C

= 30A

I

C

= 15A

Fig. 5. Collector-to-Emitter Voltage vs.

Gate-to-Emitter Voltage

2

3

4

5

6

7

8

6 7 8 9 10 11 12 13 14 15

V

GE

- Volts

V

CE

- Volts

I

C

= 60

A

T

J

= 25ºC

30

A

15

A

Fig. 6. Input Admittance

0

10

20

30

40

50

60

4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5

V

GE

- Volts

I

C

-

Amperes

T

J

= 125ºC

25ºC

- 40ºC

IXGP30N120B3

IXGP30N120B3

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