© 2009 IXYS CORPORATION, All Rights Reserved
IXGA30N120B3 IXGP30N120B3
IXGH30N120B3
Fig. 12. Inductive Switching
Energy Loss vs. Gate Resistance
2
4
6
8
10
12
14
16
18
5 7 9 1113151719212325
R
G
- Ohms
E
off
- MilliJoules
4
6
8
10
12
14
16
18
20
E
on
- MilliJoules
E
off
E
on
- - - -
T
J
= 125ºC , V
GE
= 15V
V
CE
= 960V
I
C
= 60A
I
C
= 30A
Fig. 17. Inductive Turn-off
Switching Times vs. Junction Temperature
125
175
225
275
325
375
425
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
100
130
160
190
220
250
280
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 5Ω
, V
GE
= 15V
V
CE
= 960V
I
C
= 60A, 30A
Fig. 15. Inductive Turn-off
Switching Times vs. Gate Resistance
220
260
300
340
380
420
460
5 7 9 1113151719212325
R
G
- Ohms
t
f
- Nanoseconds
50
150
250
350
450
550
650
t
d
off
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 960V
I
C
= 60A
I
C
= 30A
Fig. 13. Inductive Switching
Energy Loss vs. Collector Current
0
2
4
6
8
10
12
14
16
15 20 25 30 35 40 45 50 55 60
I
C
- Amperes
E
off
- MilliJoules
0
2
4
6
8
10
12
14
16
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 5
Ω
,
V
GE
= 15V
V
CE
= 960V
T
J
= 125ºC
T
J
= 25ºC
Fig. 14. Inductive Switching
Energy Loss vs. Junction Temperature
0
2
4
6
8
10
12
14
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
E
off
- MilliJoules
2
4
6
8
10
12
14
16
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 5Ω
,
V
GE
= 15V
V
CE
= 960V
I
C
= 60A
I
C
= 30A
Fig. 16. Inductive Turn-off
Switching Times vs. Collector Current
100
150
200
250
300
350
400
450
15 20 25 30 35 40 45 50 55 60
I
C
- Amperes
t
f
- Nanoseconds
50
100
150
200
250
300
350
400
t
d
off
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 5Ω
, V
GE
= 15V
V
CE
= 960V
T
J
= 125ºC
T
J
= 25ºC
