Philips Semiconductors
PSMN003-30 series
N-channel enhancement mode field-effect transistor
Product data Rev. 01 — 23 October 2001 5 of 13
9397 750 08316
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
8. Characteristics
Table 5: Characteristics
T
j
=25
°
C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source breakdown voltage I
D
= 0.25 mA; V
GS
=0V
T
j
=25°C30−−V
T
j
= −55 °C27−−V
V
GS(th)
gate-source threshold voltage I
D
= 1 mA; V
DS
=V
GS
; Figure 9
T
j
=25°C123 V
T
j
= 175 °C 0.4 −−V
T
j
= −55 °C −−3.4 V
I
DSS
drain-source leakage current V
DS
= 30 V; V
GS
=0V
T
j
=25°C − 0.02 1 µA
T
j
= 175 °C −−500 µA
I
GSS
gate-source leakage current V
GS
= ±20 V; V
DS
=0V − 10 100 nA
R
DSon
drain-source on-state resistance V
GS
=10V; I
D
=25A;Figure 7 and 8
T
j
=25°C − 2.4 2.8 mΩ
T
j
= 175 °C − 4.32 5 mΩ
V
GS
=5V; I
D
=25A;Figure 7 and 8
T
j
=25°C − 3.3 4 mΩ
Dynamic characteristics
Q
g(tot)
total gate charge I
D
= 75 A; V
DD
=15V; V
GS
=10V;
Figure 13
− 170 − nC
Q
gs
gate-source charge − 44 − nC
Q
gd
gate-drain (Miller) charge − 45 − nC
C
iss
input capacitance V
GS
=0V; V
DS
= 25 V; f = 1 MHz;
Figure 11
− 9200 − pF
C
oss
output capacitance − 1930 − pF
C
rss
reverse transfer capacitance − 1300 − pF
t
d(on)
turn-on delay time V
DD
= 15 V; I
D
= 12 A; V
GS
=10V;
R
G
=6Ω; resistive load
− 33 − ns
t
r
turn-on rise time − 66 − ns
t
d(off)
turn-off delay time − 210 − ns
t
f
turn-off fall time − 115 − ns
Source-drain diode
V
SD
source-drain (diode forward) voltage I
S
= 25 A; V
GS
=0V;Figure 12 − 0.85 1.2 V
