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PSMN003-30B,118
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
Philips Semiconductors
PSMN003-30 series
N-channel enhancement mode field-effect transistor
Product data
Rev
. 01 — 23 October 2001
7 of 13
9397 750 08316
© Koninklijk
e Philips Electronics N.V
. 2001. All rights reser
ved.
I
D
= 1 mA; V
DS
=V
GS
T
j
=2
5
°
C; V
DS
=5V
Fig 9.
Gate-source threshold v
oltage as a function of
junction temperature.
Fig 10.
Sub-threshold drain current as a function of
gate-source v
oltage.
V
GS
=0V
;f=1M
H
z
Fig 11.
Input, output and rever
se transfer capacitances as a function of drain-source v
oltage; typical values.
03af65
0
1
2
3
4
-60
-20
20
60
100
140
180
T
j
(ºC)
V
GS(th)
(V)
max
min
typ
03af66
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
1
01234
V
GS
(V)
I
D
(A)
min
typ
max
03af55
10
2
10
3
10
4
10
5
10
-1
1
10
10
2
V
DS
(V)
C
(pF)
C
iss
C
oss
C
rss
Philips Semiconductors
PSMN003-30 series
N-channel enhancement mode field-effect transistor
Product data
Rev
. 01 — 23 October 2001
8 of 13
9397 750 08316
© Koninklijk
e Philips Electronics N.V
. 2001. All rights reser
ved.
T
j
=2
5
°
C and 175
°
C; V
GS
=0V
I
D
= 75 A; V
DD
= 15 V
Fig 12.
Source (diode f
orward) current as a function of
source-drain (diode f
orward) v
oltage; typical
values.
Fig 13.
Gate-source v
oltage as a function of gate
charge; typical v
alues.
03af54
0
20
40
60
80
100
0.0
0.5
1.0
1.5
V
SD
(V)
I
S
(A)
T
j
= 25 ºC
175 ºC
V
GS
= 0 V
03af56
0
2
4
6
8
10
12
0
50
100
150
200
Q
G
(nC)
V
GS
(V)
V
DD
= 15 V
I
D
= 75 A
T
j
= 25 ºC
Philips Semiconductors
PSMN003-30 series
N-channel enhancement mode field-effect transistor
Product data
Rev
. 01 — 23 October 2001
9 of 13
9397 750 08316
© Koninklijk
e Philips Electronics N.V
. 2001. All rights reser
ved.
9.
P
ac
kage outline
Fig 14.
SO
T78 (T
O-220AB).
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT78
SC-46
3-lead TO-220AB
D
D
1
q
p
L
12
3
L
1
(1)
b
1
e
e
b
0
5
10 mm
scale
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
DIMENSIONS (mm are the original dimensions)
A
E
A
1
c
Note
1. Terminals in this zone are not tinned.
Q
L
2
UNIT
A
1
b
1
D
1
e
p
mm
2.54
qQ
A
b
D
c
L
2
max.
3.0
3.8
3.6
15.0
13.5
3.30
2.79
3.0
2.7
2.6
2.2
0.7
0.4
15.8
15.2
0.9
0.7
1.3
1.0
4.5
4.1
1.39
1.27
6.4
5.9
10.3
9.7
L
1
(1)
E
L
00-09-07
01-02-16
mounting
base
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
PSMN003-30B,118
Mfr. #:
Buy PSMN003-30B,118
Manufacturer:
NXP Semiconductors
Description:
MOSFET N-CH 30V 75A D2PAK
Lifecycle:
New from this manufacturer.
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