SD2931-10 Datasheet SD2931-10W, SD2931-10 | P1-P3

This is information on a product in full production.

July 2016 DocID7076 Rev 10 1/19

SD2931-10

RF power transistor:

HF/VHF/UHF N-channel power MOSFETs

Datasheet

production data

Figure 1. Pin connection

Features

• Gold metalization

• Excellent thermal stability

• Common source configuration

• P

OUT

= 150 W min. with 14 dB gain @ 175 MHz

• Thermally enhanced packaging for lower

junction temperatures

Description

The SD2931-10 is a gold metalized N-channel

MOS field-effect RF power transistor. Being

electrically identical to the standard SD2931

MOSFET, it is intended for use in 50 V dc large

signal applications up to 230 MHz.

The SD2931-10 is mechanical compatible to the

SD2931 but offers in addition a better thermal

capability (25% lower thermal resistance),

representing the best-in-class transistors for ISM

applications, where reliability and ruggedness are

critical factors.

M174

Epoxy sealed

1. Drain

2. Source

3. Gate

4. Source

Table 1. Device summary

Order code Marking Base qty. Package Packaging

(1)

SD2931-10W SD2931-10 25 pcs M174 Plastic tray

1. For more details please refer to Chapter 11: Marking, packing and shipping specifications.

www.st.com

Contents SD2931-10

2/19 DocID7076 Rev 10

Contents

1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.2 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

3 Transient thermal impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

4 Impedance data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

5 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

6 Typical performance @ 175 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

7 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

8 Typical performance @ 30 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

9 Test circuit @ 30 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

10 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

11 Marking, packing and shipping specifications . . . . . . . . . . . . . . . . . . . 17

12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

DocID7076 Rev 10 3/19

SD2931-10 Electrical data

1 Electrical data

1.1 Maximum ratings

CASE

= 25 °C).

1.2 Thermal data

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

(BR)DSS

(1)

1. T

= 150°C

Drain source voltage 125 V

DGR

Drain-gate voltage (R

= 1 MΩ)125V

Gate-source voltage ±40 V

Drain current 20 A

DISS

Power dissipation 389 W

Max. operating junction temperature 200 °C

STG

Storage temperature -65 to +150 °C

Table 3. Thermal data

Symbol Parameter Value Unit

thJC

Junction - case thermal resistance 0.45 °C/W

P1-P3 P4-P6 P7-P9 P10-P12 P13-P15 P16-P18 P19-P19

SD2931-10

Mfr. #:

Buy SD2931-10

Manufacturer:

STMicroelectronics

Description:

RF MOSFET Transistors N-Ch 125 Volt 20A

Lifecycle:

New from this manufacturer.

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SD2931-10

SD2931-10

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