SD2931-10

P1-P3 P4-P6 P7-P9 P10-P12 P13-P15 P16-P18 P19-P19

DocID7076 Rev 10 7/19

SD2931-10 Transient thermal impedance

19

Figure 3. Transient thermal impedance model

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Impedance data SD2931-10

8/19 DocID7076 Rev 10

4 Impedance data

Figure 4. Impedance data

Table 7. Impedance data

Freq Z

IN

(Ω)Z

DL

(Ω)

30 MHz 1.7 - j 5.7 6.8 + j 0.9

175 MHz 1.2 - j 2.0 2.0 + j 2.4

Typical Drain

Load Impedance

Typical Input

Impedance

G

Zin

Z

DL

D

S

DocID7076 Rev 10 9/19

SD2931-10 Typical performance

19

5 Typical performance

Figure 5. Capacitance vs drain-source voltage Figure 6. Drain current vs gate voltage

Figure 7. Gate-source voltage vs case

temperature

Figure 8. Maximum thermal resistance vs case

temperature

Figure 9. Safe operating area

0 1020304050

VDS, DRAIN-SOURCE VOLTAGE (V)

10

100

1000

10000

C, CAPACITANCE (pF)

Ciss

Coss

Crss

f =1MHz

22.533.544.555.56

VGS, GATE-SOURCE VOLTAGE (V)

0

5

10

15

20

ID, DRAIN CURRENT (A)

Tc=-20 °C

Tc=+25 °C

Tc=+80 °C

VDS = 10 V

-25 0 25 50 75 100

Tc, CASE TEMPERATURE (°C)

0.8

0.84

0.88

0.92

0.96

1

1.04

1.08

1.12

VGS, GATE-SOURCE VOLTAGE (NORMALIZED)

Id =.25A

Id =.1A

Id =1A

Id =2A

Id =4A

Id =11A

Id =5A

Id =7A

Id =9A

Id =10A

Vds= 10 V

25 35 45 55 65 75 85

Tc, CASE TEMPERATURE (°C)

0.44

0.48

0.52

0.56

0.6

RTH(j-c) (°C/W)

1 10 100 1000

Vds(V)

1

10

100

Ids(A)

(1) Current in this area may be limited by R

ds(on)

(1)

P1-P3 P4-P6 P7-P9 P10-P12 P13-P15 P16-P18 P19-P19

SD2931-10

Mfr. #:

Manufacturer:

STMicroelectronics

Description:

RF MOSFET Transistors N-Ch 125 Volt 20A

Lifecycle:

New from this manufacturer.

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