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IRLB3813PBF

P1-P3P4-P6P7-P9
www.irf.com 1
07/03/09
IRLB3813PbF
HEXFET
®
Power MOSFET
Notes through are on page 9
GDS
Gate Drain Source
PD - 97407
TO-220AB
S
D
G
D
Applications
Benefits
l Very Low R
DS(on)
at 4.5V V
GS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l Lead-Free
l Optimized for UPS/Inverter Applications
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l Power Tools
V
DSS
R
DS(on)
max
Qg (typ.)
30V
1.95m
Ω
@V
GS
= 10V
57nC
Absolute Maximum Ratings
Parameter Units
V
DS
Drain-to-Source Voltage
V
GS
Gate-to-Source Voltage
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C
Maximum Power Dissipation
P
D
@T
C
= 100°C Maximum Power Dissipation
Linear Derating Factor
W/°C
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
Junction-to-Case
––– 0.64
R
θCS
Case-to-Sink, Flat Greased Surface
0.50 –––
R
θJA
Junction-to-Ambient
––– 62
V
°C
°C/W
W
A
1.6
120
10lb
in (1.1N m)
-55 to + 175
300 (1.6mm from case)
230
Max.
260
1050
± 20
30
190
IRLB3813PbF
2 www.irf.com
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. T
y
p. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 30 ––– ––– V
∆Β
V
DSS
/
∆
T
J
Breakdown Voltage Temp. Coefficient ––– 11 ––– mV/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 1.60 1.95
mΩ
––– 2.00 2.60
V
GS(th)
Gate Threshold Voltage 1.35 1.90 2.35 V
∆
V
GS(th)
/
∆
T
J
Gate Threshold Voltage Coefficient ––– -7.8 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 1.0 µA
––– ––– 100
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 140 ––– ––– S
Q
g
Total Gate Charge ––– 57 86
Q
gs1
Pre-Vth Gate-to-Source Charge ––– 16 –––
Q
gs2
Post-Vth Gate-to-Source Charge ––– 6.7 ––– nC
Q
gd
Gate-to-Drain Charge ––– 19 –––
Q
godr
Gate Charge Overdrive ––– 15 ––– See Fig. 16
Q
sw
Switch Char
g
e (Q
gs2
+ Q
gd
)
––– 25.7 –––
Q
oss
Output Charge ––– 35 ––– nC
R
G
Gate Resistance ––– 0.87 1.3 Ω
t
d(on)
Turn-On Delay Time ––– 36 –––
t
r
Rise Time ––– 170 ––– ns
t
d(off)
Turn-Off Delay Time ––– 33 –––
t
f
Fall Time ––– 60 –––
C
iss
Input Capacitance ––– 8420 –––
C
oss
Output Capacitance ––– 1620 ––– pF
C
rss
Reverse Transfer Capacitance ––– 650 –––
Avalanche Characteristics
Parameter Units
E
AS
Si
n
gl
e
P
u
l
se
A
va
l
anc
h
e
E
ner
gy
mJ
I
AR
A
va
l
anc
h
e
C
urrent
A
Diode Characteristics
Parameter Min. T
y
p. Max. Units
I
S
Continuous Source Current ––– –––
260
(Body Diode) A
I
SM
Pulsed Source Current ––– ––– 1050
(
Bod
y
Diode
)
V
SD
Diode Forward Voltage ––– ––– 1.0 V
t
rr
Reverse Recovery Time ––– 24 36 ns
Q
rr
Reverse Recovery Charge ––– 22 33 nC
ƒ = 1.0MHz
V
GS
= 4.5V, I
D
= 48A
V
GS
= 20V
V
GS
= -20V
V
DS
= V
GS
, I
D
= 150µA
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1.0mA
V
GS
= 10V, I
D
= 60A
MOSFET symbol
V
DS
= 15V, I
D
= 48A
V
DS
= 16V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
I
D
= 48A
V
DS
= 15V
Conditions
See Fig. 14
V
GS
= 4.5V
T
J
= 25°C, I
F
= 48A, V
DD
= 15V
di/dt = 244A/
µ
s
T
J
= 25°C, I
S
= 48A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
Typ.
–––
–––
I
D
= 48A
V
GS
= 0V
V
DS
= 15V
R
G
= 1.8Ω
Max.
520
48
IRLB3813PbF
www.irf.com 3
Fig 4. Normalized On-Resistance
vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
10
100
1000
10000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
VGS
TOP 10V
9.0V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
≤
60µs PULSE WIDTH
Tj = 25°C
3.0V
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
3.0V
≤
60µs PULSE WIDTH
Tj = 175°C
VGS
TOP 10V
9.0V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
1 2 3 4 5 6 7
V
GS
, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 175°C
V
DS
= 15V
≤
60µs PULSE WIDTH
-60 -40 -20 0 20 40 60 80 100120140160180
T
J
, Junction Temperature (°C)
0.5
1.0
1.5
2.0
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 120A
V
GS
= 10V
P1-P3P4-P6P7-P9

IRLB3813PBF

Mfr. #:
Buy IRLB3813PBF
Manufacturer:
Infineon Technologies
Description:
MOSFET MOSFT 30V 190A 1.95mOhm 57nC Qg
Lifecycle:
New from this manufacturer.
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