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IRLB3813PBF
P1-P3
P4-P6
P7-P9
IRLB3813PbF
4
www.irf.com
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
V
DS
, D
rain-
to-S
ource Vol
tage (V
)
100
1000
10000
100000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHO
RTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
oss
C
rss
C
iss
0
25
50
75
100
125
150
Q
G
,
Tot
al Gat
e Charge (
nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 24V
V
DS
= 15V
I
D
= 48A
0.0
0.5
1.
0
1.5
2.0
2.
5
3.0
V
SD
, S
ource-t
o-Drai
n Vol
tage (V
)
0.1
1
10
100
1000
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°
C
T
J
= 175°
C
V
GS
= 0V
0
1
10
100
V
DS
, D
rain-
to-S
ource Vol
tage (V)
1
10
100
1000
10000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
OPERATION IN THIS AREA
LIM
ITED BY R
DS
(on)
Tc =
25°C
Tj
= 175°
C
Si
ngle P
ulse
100µsec
1msec
10msec
IRLB3813PbF
www.irf.com
5
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9.
Maximum Drain Current vs.
Case Temperature
Fig 10.
Threshold Voltage vs. Temperature
25
50
75
100
125
150
175
T
C
, C
ase Temperat
ure (°
C)
0
50
100
150
200
250
300
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
Lim
ited B
y Package
-75
-50
-25
0
25
50
75
100
125
150
175
200
T
J
, T
emperat
ure ( °C
)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
G
S
(
t
h
)
,
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= 150µA
I
D
= 1.
0mA
I
D
= 1.
0A
1E-
006
1E-
005
0.0001
0.001
0.01
0.1
t
1
, R
ectangular
Pulse D
urati
on (sec)
0.0001
0.001
0.01
0.1
1
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
°
C
/
W
0.20
0.10
D =
0.50
0.02
0.01
0.05
SINGLE PUL
SE
( THERMAL RESPO
NSE )
Notes
:
1. Du
ty Fa
cto
r D = t1
/t2
2. P
eak Tj =
P dm x Z
thjc +
Tc
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci
i
/
Ri
Ci=
τ
i
/
Ri
τ
τ
C
τ
4
τ
4
R
4
R
4
Ri (°C/W)
τ
i (sec)
0.4985 0.004600
0.0022 8.246580
0.0001 6.149340
0.1392 0.000300
IRLB3813PbF
6
www.irf.com
Fig 13c.
Unclamped Inductive Waveforms
Fig 13b.
Unclamped Inductive Test Circuit
t
p
V
(BR)DSS
I
AS
Fig 13a.
Maximum Avalanche Energy
vs. Drain Current
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
V
DS
+
-
V
DD
DRIVER
A
15V
20V
V
GS
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(
off)
t
f
Fig 14b.
Switching Time Waveforms
Fig 12.
On-Resistance vs. Gate Voltage
Fig 14a.
Switching Time Test Circuit
2
4
6
8
10
V
GS,
Gat
e -to -S
ource Vol
tage (V
)
0
2
4
6
8
10
12
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
m
Ω
)
I
D
= 60A
T
J
= 25°
C
T
J
= 125°
C
V
DS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
R
D
V
GS
R
G
D.U.T.
V
GS
+
-
V
DD
25
50
75
100
125
150
175
St
arti
ng T
J
, Junct
ion Tem
perature (
°C)
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
E
A
S
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
I
D
TO
P 17A
27A
BO
TTOM
4
8A
P1-P3
P4-P6
P7-P9
IRLB3813PBF
Mfr. #:
Buy IRLB3813PBF
Manufacturer:
Infineon Technologies
Description:
MOSFET MOSFT 30V 190A 1.95mOhm 57nC Qg
Lifecycle:
New from this manufacturer.
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IRLB3813PBF