NX3L1G3157_Q100 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 1 — 23 May 2013 7 of 21
NXP Semiconductors NX3L1G3157-Q100
Low-ohmic single-pole double-throw analog switch
11.2 ON resistance
[1] Typical values are measured at T
amb
= 25 C.
[2] Measured at identical V
CC
, temperature and input voltage.
[3] Flatness is defined as the difference between the maximum and minimum value of ON resistance measured at identical V
CC
and
temperature.
Table 8. ON resistance
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for graphs see Figure 7 to Figure 13.
Symbol Parameter Conditions T
amb
= 40 C to +85 C T
amb
= 40 C to +125 C Unit
Min Typ
[1]
Max Min Max
R
ON(peak)
ON resistance (peak) V
I
=GNDtoV
CC
;
I
SW
=100mA;
see Figure 6
V
CC
= 1.4 V - 1.6 3.7 - 4.1
V
CC
=1.65V - 1.0 1.6 - 1.7
V
CC
= 2.3 V - 0.55 0.8 - 0.9
V
CC
= 2.7 V - 0.5 0.75 - 0.9
V
CC
= 4.3 V - 0.5 0.75 - 0.9
R
ON
ON resistance
mismatch between
channels
V
I
=GNDtoV
CC
;
I
SW
=100mA
[2]
V
CC
= 1.4 V - 0.04 0.3 - 0.3
V
CC
= 1.65 V - 0.04 0.2 - 0.3
V
CC
= 2.3 V - 0.02 0.08 - 0.1
V
CC
= 2.7 V - 0.02 0.075 - 0.1
V
CC
= 4.3 V - 0.02 0.075 - 0.1
R
ON(flat)
ON resistance
(flatness)
V
I
=GNDtoV
CC
;
I
SW
=100mA
[3]
V
CC
= 1.4 V - 1.0 3.3 - 3.6
V
CC
=1.65V - 0.5 1.2 - 1.3
V
CC
= 2.3 V - 0.15 0.3 - 0.35
V
CC
= 2.7 V - 0.13 0.3 - 0.35
V
CC
= 4.3 V - 0.2 0.4 - 0.45
