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BU323ZG

P1-P3P4-P6P7-P8
© Semiconductor Components Industries, LLC, 2012
May, 2012 − Rev. 16
1 Publication Order Number:
BU323Z/D
BU323Z
NPN Silicon Power
Darlington
High Voltage Autoprotected
The BU323Z is a planar, monolithic, high−voltage power
Darlington with a built−in active zener clamping circuit. This device is
specifically designed for unclamped, inductive applications such as
Electronic Ignition, Switching Regulators and Motor Control, and
exhibit the following main features:
Features
• Integrated High−Voltage Active Clamp
• Tight Clamping Voltage Window (350 V to 450 V) Guaranteed
Over the −40°C to +125°C Temperature Range
• Clamping Energy Capability 100% Tested in a Live
Ignition Circuit
• High DC Current Gain/Low Saturation Voltages
Specified Over Full Temperature Range
• Design Guarantees Operation in SOA at All Times
• Offered in Plastic SOT−93/TO−218 Type or
TO−220 Packages
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Max Unit
Collector−Emitter Sustaining Voltage V
CEO
350 Vdc
Collector−Emitter Voltage V
EBO
6.0 Vdc
Collector Current − Continuous
− Peak
I
C
I
CM
10
20
Adc
Base Current − Continuous
− Peak
I
B
I
BM
3.0
6.0
Adc
Total Power Dissipation @ T
C
= 25_C
Derate above 25_C
P
D
150
1.0
W
W/_C
Operating and Storage Junction Temperature
Range
T
J
, T
stg
–65 to
+175
_C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
1.0
_C/W
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from Case for 5 Seconds
T
L
260
_C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SOT−93
CASE 340D
STYLE 1
10 AMPERE DARLINGTON
AUTOPROTECTED
360 − 450 VOLTS CLAMP,
150 WATTS
http://onsemi.com
360 V
CLAMP
COLLECTOR 2,4
BASE
1
EMITTER 3
3
2
1
4
TO−247
CASE 340L
STYLE 3
NOTE: Effective June 2012 this device will
be available only in the TO−247
package. Reference FPCN# 16827.
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
BU323Z
http://onsemi.com
2
MARKING DIAGRAMS
BU323Z
AYWWG
1 BASE
2 COLLECTOR
3 EMITTER
AYWWG
BU323Z
BU323Z = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G=Pb−Free Package
1 BASE
2 COLLECTOR
3 EMITTER
TO−247
TO−218
ORDERING INFORMATION
Device Order Number Package Type Shipping
BU323ZG TO−218
(Pb−Free)
30 Units / Rail
BU323ZG TO−247
(Pb−Free)
30 Units / Rail
BU323Z
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS (1)
Collector−Emitter Clamping Voltage (I
C
= 7.0 A)
(T
C
= − 40°C to +125°C)
V
CLAMP
350 − 450 Vdc
Collector−Emitter Cutoff Current
(V
CE
= 200 V, I
B
= 0)
I
CEO
− − 100
mAdc
Emitter−Base Leakage Current
(V
EB
= 6.0 Vdc, I
C
= 0)
I
EBO
− − 50 mAdc
ON CHARACTERISTICS (1)
Base−Emitter Saturation Voltage
(I
C
= 8.0 Adc, I
B
= 100 mAdc)
(I
C
= 10 Adc, I
B
= 0.25 Adc)
V
BE(sat)
−
−
−
−
2.2
2.5
Vdc
Collector−Emitter Saturation Voltage
(I
C
= 7.0 Adc, I
B
= 70 mAdc)
(T
C
= 125°C)
(I
C
= 8.0 Adc, I
B
= 0.1 Adc)
(T
C
= 125°C)
(I
C
= 10 Adc, I
B
= 0.25 Adc)
V
CE(sat)
−
−
−
−
−
−
−
−
−
−
1.6
1.8
1.8
2.1
1.7
Vdc
Base−Emitter On Voltage
(I
C
= 5.0 Adc, V
CE
= 2.0 Vdc) (T
C
= − 40°C to +125°C)
(I
C
= 8.0 Adc, V
CE
= 2.0 Vdc)
V
BE(on)
1.1
1.3
−
−
2.1
2.3
Vdc
Diode Forward Voltage Drop
(I
F
= 10 Adc)
V
F
− − 2.5 Vdc
DC Current Gain
(I
C
= 6.5 Adc, V
CE
= 1.5 Vdc) (T
C
= − 40°C to +125°C)
(I
C
= 5.0 Adc, V
CE
= 4.6 Vdc)
h
FE
150
500
−
−
−
3400
−
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth
(I
C
= 0.2 Adc, V
CE
= 10 Vdc, f = 1.0 MHz)
f
T
− − 2.0 MHz
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
C
ob
− − 200 pF
Input Capacitance
(V
EB
= 6.0 V)
C
ib
− − 550 pF
CLAMPING ENERGY (see notes)
Repetitive Non−Destructive Energy Dissipated at turn−off:
(I
C
= 7.0 A, L = 8.0 mH, R
BE
= 100 W) (see Figures 2 and 4)
W
CLAMP
200 − − mJ
SWITCHING CHARACTERISTICS: Inductive Load (L = 10 mH)
Fall Time
(I
C
= 6.5 A, I
B1
= 45 mA,
V
BE(off)
= 0, R
BE(off)
= 0,
V
CC
= 14 V, V
Z
= 300 V)
t
fi
− 625 − ns
Storage Time t
si
− 10 30
ms
Cross−over Time t
c
− 1.7 −
ms
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle = 2.0%.
P1-P3P4-P6P7-P8

BU323ZG

Mfr. #:
Buy BU323ZG
Manufacturer:
ON Semiconductor
Description:
Darlington Transistors 10A 350V Bipolar Power NPN
Lifecycle:
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