BU323ZG

BU323Z
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4
Figure 1. I
C
= f(V
CE
) Curve Shape
I
C
I
NOM
= 6.5 A
Output transistor turns on: I
C
= 40 mA
High Voltage Circuit turns on: I
C
= 20 mA
Avalanche diode turns on: I
C
= 100 mA
Icer Leakage Current
250 V 300 V 340 V
V
CE
V
CLAMP
NOMINAL
= 400 V
By design, the BU323Z has a builtin avalanche diode and
a special high voltage driving circuit. During an
autoprotect cycle, the transistor is turned on again as soon
as a voltage, determined by the zener threshold and the
network, is reached. This prevents the transistor from going
into a Reverse Bias Operating limit condition. Therefore, the
device will have an extended safe operating area and will
always appear to be in “FBSOA.” Because of the builtin
zener and associated network, the I
C
= f(V
CE
) curve exhibits
an unfamiliar shape compared to standard products as
shown in Figure 1.
Figure 2. Basic Energy Test Circuit
MERCURY CONTACTS
WETTED RELAY
V
CE
MONITOR
(V
GATE
)
L INDUCTANCE
(8 mH)
I
B
CURRENT
SOURCE
V
BEoff
I
B2
SOURCE
I
C
CURRENT
SOURCE
0.1 W
NON
INDUCTIVE
I
C
MONITOR
R
BE
= 100 W
The bias parameters, V
CLAMP
, I
B1
, V
BE(off)
, I
B2
, I
C
, and
the inductance, are applied according to the Device Under
Test (DUT) specifications. V
CE
and I
C
are monitored by the
test system while making sure the load line remains within
the limits as described in Figure 4.
Note: All BU323Z ignition devices are 100% energy
tested, per the test circuit and criteria described in Figures 2
and 4, to the minimum guaranteed repetitive energy, as
specified in the device parameter section. The device can
sustain this energy on a repetitive basis without degrading
any of the specified electrical characteristics of the devices.
The units under test are kept functional during the complete
test sequence for the test conditions described:
I
C(peak)
= 7.0 A, I
C
H = 5.0 A, I
C
L = 100 mA, I
B
= 100 mA,
R
BE
= 100 W, V
gate
= 280 V, L = 8.0 mH
Figure 3. Forward Bias Safe Operating Area
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
1000340V10010
0.001
0.01
0.1
1
10
T
C
= 25°C
250ms
10ms
1ms
300ms
I
C
, COLLECTOR CURRENT (AMPS)
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
CURVES APPLY BELOW
RATED V
CEO
BU323Z
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5
Figure 4. Energy Test Criteria for BU323Z
The shaded area represents the amount of energy the
device can sustain, under given DC biases (I
C
/I
B
/V
BE(off)
/
R
BE
), without an external clamp; see the test schematic dia-
gram, Figure 2.
The transistor PASSES the Energy test if, for the inductive
load and I
CPEAK
/I
B
/V
BE(off)
biases, the V
CE
remains outside
the shaded area and greater than the V
GATE
minimum limit,
Figure 4a.
The transistor FAILS if the V
CE
is less than the V
GATE
(minimum limit) at any point along the V
CE
/I
C
curve as
shown on Figures 4b, and 4c. This assures that hot spots and
uncontrolled avalanche are not being generated in the die,
and the transistor is not damaged, thus enabling the sustained
energy level required.
The transistor FAILS if its Collector/Emitter breakdown
voltage is less than the V
GATE
value, Figure 4d.
I
CPEAK
(a)
I
C
I
C
HIGH
I
C
LOW
V
CE
V
GATE
MIN
I
CPEAK
I
C
I
C
HIGH
I
C
LOW
V
CE
V
GATE
MIN
(b)
I
CPEAK
I
C
I
C
HIGH
I
C
LOW
V
CE
V
GATE
MIN
(c)
I
CPEAK
I
C
I
C
HIGH
I
C
LOW
V
CE
V
GATE
MIN
(d)
BU323Z
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6
Figure 5. DC Current Gain
I
C
, COLLECTOR CURRENT (MILLIAMPS)
100001000100
10
100
1000
10000
T
J
= 125°C
25°C
h
FE
, DC CURRENT GAIN
-40°C
V
CE
= 1.5 V
Figure 6. DC Current Gain
I
C
, COLLECTOR CURRENT (MILLIAMPS)
1000001000100
10
100
1000
10000
TYPICAL
h
FE
, DC CURRENT GAIN
V
CE
= 5 V, T
J
= 25°C
10000
TYP + 6Σ
TYP - 6Σ
Figure 7. Collector Saturation Region
I
B
, BASE CURRENT (MILLIAMPS)
100101
0
2.5
4.0
5.0
T
J
= 25°C
I
C
= 3 A
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
4.5
2.0
3.5
3.0
1.0
0.5
1.5
5 A
7 A
8 A
10 A
Figure 8. CollectorEmitter Saturation Voltage
I
C
, COLLECTOR CURRENT (AMPS)
1010.1
0.4
1.4
2.0
2.4
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
2.2
1.2
1.8
1.6
0.8
0.6
1.0
T
J
= 125°C
25°C
I
C
/I
B
= 150
Figure 9. BaseEmitter Saturation Voltage
I
C
, COLLECTOR CURRENT (AMPS)
1010.1
0.8
1.8
2.0
1.4
1.6
1.2
1.0
Figure 10. BaseEmitter “ON” Voltages
I
C
, COLLECTOR CURRENT (AMPS)
1010.1
0.6
1.4
1.8
2.0
1.2
1.6
0.8
1.0
V
BE
, BASE-EMITTER VOLTAGE (VOLTS)
I
C
/I
B
= 150
T
J
= 25°C
125°C
V
BE(on)
, BASE-EMITTER VOLTAGE (VOLTS)
V
CE
= 2 VOLTS
T
J
= 25°C
125°C

BU323ZG

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Darlington Transistors 10A 350V Bipolar Power NPN
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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