IXFV26N60P Datasheet IXFH26N60P, IXFT26N60P, IXFV26N60PS | P1-P3

G

D

S

G = Gate D = Drain

S = Source TAB = Drain

DS99435E(12/06)

PolarHV

TM

Power MOSFET

V

DSS

= 600 V

I

D25

=26 A

R

DS(on)

≤≤

≤ 270 m

ΩΩ

Ω

t

rr

≤≤

≤ 200 ns

N-Channel Enhancement Mode

Fast Recovery Diode

Avalanche Rated

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, unless otherwise specified) Min. Typ. Max.

BV

DSS

V

GS

= 0 V, I

D

= 250 μA 600 V

V

GS(th)

V

DS

= V

GS

, I

D

= 4 mA 2.5 5.0 V

I

GSS

V

GS

= ±30 V, V

DS

= 0 V ±100 nA

I

DSS

V

DS

= V

DSS

25 μA

V

GS

= 0 V T

J

= 125°C 250 μA

R

DS(on)

V

GS

= 10 V, I

D

= 0.5 I

D25

270 mΩ

Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25°C to 150°C 600 V

V

DGR

T

J

= 25°C to 150°C; R

GS

= 1 MΩ 600 V

V

GSS

Continuous ±30 V

V

GSM

Transient ±40 V

I

D25

T

C

= 25°C26A

I

DM

T

C

= 25°C, pulse width limited by T

JM

65 A

I

AR

T

C

= 25°C13A

E

AR

T

C

= 25°C40mJ

E

AS

T

C

= 25°C 1.2 J

dv/dt I

S

≤ I

DM

, di/dt ≤ 100 A/μs, V

DD

≤ V

DSS

10 V/ns

T

J

≤ 150°C, R

G

= 5 Ω

P

D

T

C

= 25°C 460 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

T

L

1.6 mm (0.062 in.) from case for 10 s 300 ° C

T

SOLD

Plastic body for 10 s 260 ° C

M

d

Mounting torque (TO-3P&TO-247) 1.13/10 Nm/lb.in.

F

C

Mounting force (PLUS220) 11..65/2.5..15 N/lb

Weight TO-247 6.0 g

TO-268 5.0 g

PLUS220 & PLUS220SMD 4.0 g

IXFH26N60P

IXFT26N60P

IXFV26N60P

IXFV26N60PS

TO-268 (IXFT)

G

S

D (TAB)

TO-247 (IXFH)

G

S

D (TAB)

PLUS220SMD (IXFV...S)

G

S

D

PLUS220 (IXFV)

D (TAB)

Features

z

Fast Recovery diode

z

Unclamped Inductive Switching (UIS)

rated

z

International standard packages

z

Low package inductance

- easy to drive and to protect

Advantages

z

Easy to mount

z

Space savings

z

High power density

IXYS reserves the right to change limits, test conditions, and dimensions.

IXFH 26N60P IXFT 26N60P

IXFV 26N60P IXFV 26N60PS

Fig. 2. Extended Output Characteristics

@ 25

º

C

0

6

12

18

24

30

36

42

48

54

60

0 3 6 9 12 15 18 21 24 27 30

V

D S

- Volts

I

D

- Amperes

V

GS

= 10V

7V

5V

6V

Fig. 1. Output Characteristics

@ 25

º

C

0

4

8

12

16

20

24

01234567

V

D S

- Volts

I

D

- Amperes

V

GS =

10V

7V

5V

6V

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, unless otherwise specified)

Min. Typ. Max.

g

fs

V

DS

= 20 V; I

D

= 0.5 I

D25

, pulse test 16 26 S

C

iss

4150 pF

C

oss

V

GS

= 0 V, V

DS

= 25 V, f = 1 MHz 400 pF

C

rss

27 pF

t

d(on)

25 ns

t

r

V

GS

= 10 V, V

DS

= 0.5 I

D25

27 ns

t

d(off)

R

G

= 5 Ω (External) 75 ns

t

f

21 ns

Q

g(on)

72 nC

Q

gs

V

GS

= 10 V, V

DS

= 0.5 V

DSS

, I

D

= 0.5 I

D25

27 nC

Q

gd

24 nC

R

thJC

0.27 °C/W

R

thCs

(PLUS220 & TO-247) 0.21 °C/W

Source-Drain Diode Characteristic Values

(T

J

= 25°C, unless otherwise specified)

Symbol Test Conditions Min. Typ. Max.

I

S

V

GS

= 0 V 26 A

I

SM

Repetitive 78 A

V

SD

I

F

= I

S

, V

GS

= 0 V, pulse test 1.5 V

t

rr

I

F

= 25A, -di/dt = 100 A/μs 150 200 ns

I

RM

V

R

= 100V; V

GS

= 0 V 7 A

Q

RM

0.7 μC

Characteristic Curves

IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585

one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2

Fig. 3. Output Characteristics

@ 125

º

C

0

4

8

12

16

20

24

0246810121416

V

D S

- Volts

I

D

- Amperes

V

GS

= 10V

7V

6V

5V

Fig. 4. R

DS(on

)

Normalized to 0.5 I

D25

Value vs. Junction Temperature

0.4

0.8

1.2

1.6

2

2.4

2.8

3.2

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

D S ( o n )

- Normalize

d

I

D

= 26A

I

D

= 13A

V

GS

= 10V

Fig. 6. Drain Current vs. Case

Temperature

0

3

6

9

12

15

18

21

24

27

30

-50 -25 0 25 50 75 100 125 150

T

C

- Degrees Centigrade

I

D

- Amperes

Fig. 5. R

DS(on)

Normalized to

0.5 I

D25

Value vs. I

D

0.8

1.2

1.6

2

2.4

2.8

3.2

0 102030405060

I

D

- Amperes

R

D S ( o n )

- Normalize

d

T

J

= 125

º

C

T

J

= 25

º

C

V

GS

= 10V

Fig. 7. Input Admittance

0

5

10

15

20

25

30

35

40

45

50

4 4.5 5 5.5 6 6.5 7 7.5

V

G S

- Volts

I

D

- Amperes

T

J

= 125

º

C

25

º

C

-40

º

C

Fig. 8. Transconductance

0

5

10

15

20

25

30

35

40

45

50

0 5 10 15 20 25 30 35 40 45 50

I

D

- Amperes

g

f s

- Siemens

T

J

= -40

º

C

25

º

C

125

º

C

IXFH 26N60P IXFT 26N60P

IXFV 26N60P IXFV 26N60PS

IXFV26N60P

IXFV26N60P

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