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IXFV26N60P

P1-P3P4-P5
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH 26N60P IXFT 26N60P
IXFV 26N60P IXFV 26N60PS
Fig. 11. Capacitance
10
100
1000
10000
0 5 10 15 20 25 30 35 40
V
D S
- Volts
Capacitance - picoFarads
C
iss
C
oss
C
rss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 1020304050607080
Q
G
- nanoCoulombs
V
G S
- Volts
V
DS
= 300V
I
D
= 13A
I
G
= 10mA
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0
10
20
30
40
50
60
70
80
0.4 0.5 0.6 0.7 0.8 0.9 1 1.1
V
S D
- Volts
I
S
- Amperes
T
J
= 125
º
C
T
J
= 25
º
C
Fig. 12. Maximum Transient Thermal Resistance
0.01
0.10
1.00
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
R
( t h ) J C
-
ºC / W
© 2006 IXYS All rights reserved
TO-268 (IXFT) Outline TO-247 AD (IXFH) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
1
2.2 2.54 .087 .102
A
2
2.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b
1
1.65 2.13 .065 .084
b
2
2.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
1 2 3
IXFH 26N60P IXFT 26N60P
IXFV 26N60P IXFV 26N60PS
PLUS220SMD (IXFV_S) Outline
PLUS220 (IXFV) Outline
P1-P3P4-P5

IXFV26N60P

Mfr. #:
Buy IXFV26N60P
Manufacturer:
Description:
IGBT Transistors MOSFET 600V 26A
Lifecycle:
New from this manufacturer.
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