IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFH110N25T
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max.
g
fs
V
DS
= 10V, I
D
= 0.5 • I
D25
, Note 1 65 110 S
C
iss
9400 pF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 850 pF
C
rss
55 pF
t
d(on)
19 ns
t
r
27 ns
t
d(off)
60 ns
t
f
27 ns
Q
g(on)
157 nC
Q
gs
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 25A 40 nC
Q
gd
50 nC
R
thJC
0.18 C/W
R
thCS
0.21 C/W
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Resistive Switching Times
V
GS
= 15V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 2 (External)
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max.
I
S
V
GS
= 0V 110 A
I
SM
Repetitive, Pulse Width Limited by T
JM
350 A
V
SD
I
F
= 55A, V
GS
= 0V, Note 1 1.2 V
t
rr
170 ns
I
RM
17 A
Q
RM
0.95 μC
I
F
= 55A, -di/dt = 250A/s,
V
R
=
100V, V
GS
= 0V
Note: 1. Pulse test, t 300μs, duty cycle, d 2%.
TO-247 (IXFH) Outline
R
L1
A2
Q
E
A
D
c
B
A
b
C
L
D
S
D2
E1
A2 A2 A2
e
0P1
ixys option
A1
b4
b2
D1
0P
O 0K M D B M
+
O J M C A M
+
1
2 3
4
+
+
PINS: 1 - Gate
2, 4 - Drain
3 - Source
