© 2015 IXYS CORPORATION, All Rights Reserved
IXFH110N25T
IXYS REF: F_110N25T(8W)5-14-12-B
Fig. 14. Resistive Turn-on Rise Time vs.
Drain Current
18
20
22
24
26
28
30
32
20 30 40 50 60 70 80 90 100 110 120
I
D
- Amperes
t
r
- Nanoseconds
T
J
= 125
o
C
T
J
= 25
o
C
R
G
= 2Ω , V
GS
= 15V
V
DS
= 125V
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
20
25
30
35
40
45
50
2345678910
R
G
- Ohms
t
r
- Nanoseconds
19
21
23
25
27
29
31
t
d
o n
- Nanoseconds
t
r
t
d(on)
T
J
= 125
o
C, V
GS
= 15V
V
DS
= 125V
I
D
= 110A, 55A
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
14
18
22
26
30
34
38
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
50
54
58
62
66
70
74
t
d
o f f
- Nanoseconds
t
f
t
d(off)
R
G
= 2Ω, V
GS
= 15V
V
DS
= 125V
I
D
= 55A
I
D
= 110A
Fig. 17. Resistive Turn-off Switching Times vs.
Drain Current
20
22
24
26
28
30
32
20 30 40 50 60 70 80 90 100 110 120
I
D
- Amperes
t
f
- Nanoseconds
40
50
60
70
80
90
100
t
d
o f f
- Nanoseconds
t
f
t
d(off)
R
G
= 2Ω, V
GS
= 15V
V
DS
= 125V
T
J
= 125
o
C
T
J
= 25
o
C
T
J
= 125
o
C
T
J
= 25
o
C
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
10
30
50
70
90
110
2345678910
R
G
- Ohms
t
f
- Nanoseconds
40
80
120
160
200
240
t
d ( o f f )
- Nanoseconds
t
f
t
d(off)
T
J
= 125
o
C, V
GS
= 15V
V
DS
= 125V
I
D
= 55A, 110A
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
20
22
24
26
28
30
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 2Ω , V
GS
= 15V
V
DS
= 125V
I
D
= 55A
I
D
= 110A
