ZXGD3103N8TC

P1-P3 P4-P6 P7-P9 P10-P12

ZXGD3103N8

Document number: DS32255 Rev. 3 - 2

4 of 12

www.diodes.com

June 2016

© Diodes Incorporated

ZXGD3103N8

Thermal Derating Curve

0 20 40 60 80 100 120 140 160

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

15mm x 15mm

5mm x 5mm

Minimum

Layout

Derating Curve

Junction Temperature (

O

C)

Max Power Dissipation (W)

10mm x 10mm

Electrical Characteristics (@ V

CC

= 10V, T

A

= +25°C, R

BIAS

= 3.3kΩ

,

R

REF

= 4.3kΩ

,

unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Input Supply

Operating Current

I

OP

—

2.16

—

mA

V

D

≤ -200mV

—

5.16

—

mA

V

D

≥ 0mV

Gate Driver

Turn-off Threshold Voltage

V

T

-16

-10

0

mV

V

G

=1V, R

H

= 100kΩ, R

L

= o/c

Gate Output Voltage

V

G(OFF)

—

0.73

1

V

V

D

≥ 0mV, R

H

= 100kΩ, R

L

= o/c

V

G

6

7.2

—

V

D

= -50mV, R

H

= o/c, R

L

= 100kΩ

V

G

8.8

9.2

—

V

D

= -100mV, R

H

= o/c, R

L

= 100kΩ

V

G

9.2

9.4

—

V

D

≤ -150mV, R

H

= o/c, R

L

= 100kΩ

V

G

9.3

9.5

—

V

D

≤ -200mV, R

H

= o/c, R

L

= 100kΩ

Switching Performance

Turn-On Propagation Delay

t

D1

—

150

—

ns

Refer to application test circuit below

Gate Rise Time

t

R

—

450

—

Turn-Off Propagation Delay

t

D2

—

15

—

Gate Fall Time, Continuous Conduction

Mode

t

F

—

21

—

Gate Fall Time, Discontinuous Conduction

Mode

t

F

—

17

—

DRAIN

GATEH GND

REF BIAS Vcc

GATEL

3103

150V MOSFET:

Q

g(TOT)

= 82nC, R

DS(ON)

= 15mΩ

Flyback Transformer:

Magnetising Inductance = 820μH

R

BIAS

3.3KΩ

R

REF

4.3KΩ

C1

1μF

ZXGD

Vcc = 10V

Output Load = 12V, 30W

Test Conditions:

Primary Side Input Voltage = 110V

Primary MOSFET Switching

Frequency = 100kHz

Continuous Conduction Mode

V

D

V

G

ZXGD3103N8

Document number: DS32255 Rev. 3 - 2

5 of 12

www.diodes.com

June 2016

© Diodes Incorporated

ZXGD3103N8

Typical Electrical Characteristics (@ T

A

= +25°C, unless otherwise specified.)

0 5 10 15 20 25

-5

-4

-3

-2

-1

0

1

-100 -80 -60 -40 -20 0

0

2

4

6

8

10

12

14

-100 -80 -60 -40 -20 0

0

2

4

6

8

10

-50 -25 0 25 50 75 100 125 150

-25

-20

-15

-10

-5

0

5

1k 10k 100k

10

100

0 2 4 6 8 10 12 14 16 18 20 22

0

20

40

60

80

100

Current flow Gate to Ground

Current flow Supply to Gate

Gate Current vs Capacitive Load

Peak Current (A)

Capacitance (nF)

V

CC

= 10V

R

BIAS

=3K3

R

REF

=4K3

T = 25

O

C

See Resistor Table for Values

V

CC

= 15V

V

CC

= 12V

V

CC

= 10V

V

CC

= 5V

Transfer Characteristic

V

G

Gate Voltage (V)

V

D

Drain Voltage (mV)

T = -40

O

C

T = 25

O

C

T = 85

O

C

T = 125

O

C

Transfer Characteristic

V

G

Gate Voltage (V)

V

D

Drain Voltage (mV)

V

CC

= 10V

R

BIAS

=3K3

R

REF

=4K3

100k pull down

V

CC

= 10V

R

BIAS

=3K3

R

REF

=4K3

V

G

= 1V

100k pull up

Drain Sense Voltage vs Temperature

V

D

Drain Voltage (mV)

Temperature (

O

C)

V

CC

= 10V

R

BIAS

=3k3

R

REF

=4K3

D = 0.5

Supply Current vs Frequency

Supply Current (mA)

Frequency (Hz)

C

LOAD

=22nF

C

LOAD

=10nF

C

LOAD

=4.7nF

C

LOAD

=2.2nF

C

LOAD

=1nF

V

CC

= 5V

V

CC

= 10V

V

CC

= 12V

V

CC

= 15V

Supply Current vs Capacitive Load

Capacitance (nF)

Supply Current (mA)

R

BIAS

=3k3

R

REF

=4K3

D = 0.5

f=250kHz

ZXGD3103N8

Document number: DS32255 Rev. 3 - 2

6 of 12

www.diodes.com

June 2016

© Diodes Incorporated

ZXGD3103N8

Typical Electrical Characteristics (@ T

A

= +25°C, unless otherwise specified.) (Cont.)

-0.5 0.0 0.5 1.0 1.5

-2

0

2

4

6

8

10

-40 -20 0 20 40 60 80 100 120 140

-2

0

2

4

6

8

10

-0.5 0.0 0.5 1.0 1.5

0.0

0.1

0.2

0.3

-40 -20 0 20 40 60 80 100 120 140

-4

-3

-2

-1

0

1

2

-50 -25 0 25 50 75 100 125 150

-2

0

2

4

6

V

CC

=10V

R

BIAS

=3k3

R

REF

=4K3

C

LOAD

=10nF

V

D

Switch On Speed

Voltage (V)

Time (s)

V

G

V

CC

=10V

R

BIAS

=10k

R

REF

=4K7

C

LOAD

=10nF

V

G

V

D

Switch Off Speed

Voltage (V)

Time (ns)

V

CC

=10V

R

BIAS

=3k3

R

REF

=4K3

C

LOAD

=10nF

Gate Drive On Current

Gate Current (A)

Time (s)

V

CC

=10V

R

BIAS

=3k3

R

REF

=4K3

C

LOAD

=10nF

Gate Drive Off Current

Gate Current (A)

Time (ns)

V

CC

=10V

R

BIAS

=3k3

R

REF

=4K3

C

LOAD

=10nF

t

OFF

= t

D

+ t

F

Switching vs Temperature

Percent Change Time (%)

Temperature (

O

C)

t

ON

= t

D

+ t

R

P1-P3 P4-P6 P7-P9 P10-P12

ZXGD3103N8TC

Mfr. #:

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Manufacturer:

Diodes Incorporated

Description:

Gate Drivers SYNC Mosfet CNTRL Vcc 15V 25mA 490mA

Lifecycle:

New from this manufacturer.

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ZXGD3103N8TC