ZXGD3103N8TC

ZXGD3103N8
Document number: DS32255 Rev. 3 - 2
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© Diodes Incorporated
ZXGD3103N8
Typical Application Circuits
The purpose of the ZXGD3103 is to drive a MOSFET as a low-V
F
Schottky diode replacement in offline power converters. When combined with a
low R
DS(ON)
MOSFET, it can yield significant power efficiency improvement, whilst maintaining design simplicity and incurring minimal component
count. Figure 1 and 2 show typical configuration of ZXGD3103 for synchronous rectification in a Flyback and a multiple output resonant converter.
Synchronous MOSFET
Transformer
+ In
- In
PWM controller
CCM/CrCM/DCM
+V
OUT
- Out
Vcc
GND
D
G S
DRAIN
GATEH
GND
REF BIAS Vcc
GATEL
R
REF
R
BIAS
ZXGD3103
C1 D1
R4
R
CLAMP
C
CLAMP
R
D
D
CLAMP
Q2
Regulator circuit is required to
support V
OUT
> +15V
Figure 1. Example Connections in Flyback Supply
+12V
R
REF
R
BIAS
Schottky
DRAINGND
REF BIAS Vcc
ZXGD3103
R
REF
R
BIAS
C2
ZXGD3103
C
OUT
Gate
Gate
DRAINGND
REF
BIAS Vcc
Transformer
C
OUT
+24V
Resonant tank
and primary
switches
Schottky
Synchronous MOSFET
Synchronous MOSFET
Figure 2. Example Connections in LLC Supply
ZXGD3103N8
Document number: DS32255 Rev. 3 - 2
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June 2016
© Diodes Incorporated
ZXGD3103N8
Operation in Typical Application
The operation of the device is described step-by-step with reference to the timing diagram in Figure 3.
1. The detector monitors the MOSFET Drain-Source voltage.
2. When, due to transformer action, the MOSFET body diode is forced to conduct there is approximately -0.8V on the Drain pin.
3. The detector outputs a positive voltage with respect to ground, this voltage is then fed to the MOSFET driver stage and current is sourced out of
the GATE pin.
4. The controller goes into proportional gate drive control the GATE output voltage is proportional to the on-resistance-induced Drain-Source
voltage drop across the MOSFET. Proportional gate drive ensures that MOSFET conducts for majority of the conduction cycle and minimizes body
diode conduction time.
5. As the Drain current decays linearly toward zero, proportional gate drive control reduces the Gate voltage so the MOSFET can be turned off
rapidly at zero current crossing. The GATE voltage is removed when the Drain-Source voltage crosses the detection threshold voltage to minimize
reverse current flow.
6. At zero Drain current, the controller GATE output voltage is pulled low to V
G(OFF)
to ensure that the MOSFET is off.
Figure 3 shows typical operating waveforms for ZXGD3103 driving a MOSFET with Q
g(TOT)
= 82nC in a Flyback converter operating in critical
conduction mode.
10%
t
R
t
D1
-10mV
90%
t
F
Body Diode
Conduction
V
D
V
G
I
D
0A
t
D2
1
2
3
4
5
6
90%
10%
Figure 3. Timing Diagram for a Critical Conduction Mode Flyback Converter
ZXGD3103N8
Document number: DS32255 Rev. 3 - 2
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June 2016
© Diodes Incorporated
ZXGD3103N8
Typical Waveforms
Fig 4a: Critical Conduction Mode
Switch On Speed
-2
-1
0
1
2
3
4
5
6
7
8
9
10
-0.4 -0.2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Time (μs)
Voltage (V) .
V
G
V
D
V
CC
= 10V
R
BIAS
= 3K3
R
REF
= 4K3
Q
g(TOT)
= 82nC
Fig 4b: Typical Switch ON Speed when Driving a Q
g(TOT)
= 82nC MOSFET
Fig 4c: Typical Switch OFF Speed when Driving a Q
g(TOT)
= 82nC MOSFET
Switch OFF Speed
-2
-1
0
1
2
3
4
5
6
7
8
9
10
-0.05 -0.04 -0.03 -0.02 -0.01 0.00 0.01 0.02 0.03 0.04 0.05
Time (μs)
Voltage (V) .
V
G
V
D
V
CC
= 10V
R
BIAS
= 3K3
R
REF
= 4K3
Q
g(TOT)
= 82nC
Switch On Speed
Switch On Speed
V
CC
=10V
R
BIAS
=3K3
R
REF
=4K3
Q
g(TOT)
=82nC
V
CC
=10V
R
BIAS
=3K3
R
REF
=4K3
Q
g(TOT)
=82nC

ZXGD3103N8TC

Mfr. #:
Manufacturer:
Diodes Incorporated
Description:
Gate Drivers SYNC Mosfet CNTRL Vcc 15V 25mA 490mA
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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