IRF7750
2 www.irf.com
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode) showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– -1.2 V T
J
= 25°C, I
S
= -1.0A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 26 39 ns T
J
= 25°C, I
F
= -1.0A
Q
rr
Reverse RecoveryCharge ––– 16 24 nC di/dt = 100A/µs
Source-Drain Ratings and Characteristics
–––
–––
––– ––– -38
-1.0
A
When mounted on 1 inch square copper board, t<10 sec
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage -20 ––– ––– V V
GS
= 0V, I
D
= -250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 0.012 ––– V/°C Reference to 25°C, I
D
= -1mA
––– ––– 0.030 V
GS
= -4.5V, I
D
= -4.7A
––– ––– 0.055 V
GS
= -2.5V, I
D
= -3.8A
V
GS(th)
Gate Threshold Voltage -0.45 ––– -1.2 V V
DS
= V
GS
, I
D
= -250µA
g
fs
Forward Transconductance 11 ––– ––– S V
DS
= -10V, I
D
= -4.7A
––– ––– -1.0 V
DS
= -20V, V
GS
= 0V
––– ––– -25 V
DS
= -16V, V
GS
= 0V, T
J
= 70°C
Gate-to-Source Forward Leakage ––– ––– -100 V
GS
= -12V
Gate-to-Source Reverse Leakage ––– ––– 100 V
GS
= 12V
Q
g
Total Gate Charge ––– 26 39 I
D
= -4.7A
Q
gs
Gate-to-Source Charge ––– 3.9 5.8 nC V
DS
= -16V
Q
gd
Gate-to-Drain ("Miller") Charge ––– 8.0 12 V
GS
= -5.0V
t
d(on)
Turn-On Delay Time ––– 15 ––– V
DD
= -10V
t
r
Rise Time ––– 54 ––– I
D
= -1.0A
t
d(off)
Turn-Off Delay Time ––– 180 ––– R
D
= 10Ω
t
f
Fall Time ––– 210 ––– R
G
= 24Ω
C
iss
Input Capacitance ––– 1700 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 380 ––– pF V
DS
= -15V
C
rss
Reverse Transfer Capacitance ––– 270 ––– ƒ = 1.0MHz
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
GSS
µA
Ω
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
nA
ns
S
D
G
