IRF7750
4 www.irf.com
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 7. Threshold Voltage Vs. Temperature
1 10 100
0
500
1000
1500
2000
2500
-V , Drain-to-Source Volta
e (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss
s
d , ds
rss
d
oss ds
d
C
rss
C
oss
C
iss
0 10 20 30 40
0
2
4
6
8
10
Q , Total Gate Char
e (nC)
-V , Gate-to-Source Voltage (V)
G
GS
I =
D
-4.7A
V =-16V
DS
-75 -50 -25 0 25 50 75 100 125 150
T
J
, Temperature ( °C )
0.20
0.40
0.60
0.80
1.00
-V
GS(th)
, Variace ( V )
I
D
= -250µA
0.1
1
10
100
1000
0.1 1 10 100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
A
-V , Drain-to-Source Volta
e (V)
-I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms