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AUIRF7316QTR

P1-P3P4-P6P7-P8
AUIRF7316Q
V
DSS
-30V
R
DS(on)
typ.
0.042
I
D
-4.9A
max.
0.058
Description
Specifically designed for Automotive applications, these HEXFET®
Power MOSFET's in a Dual SO-8 package utilize the lastest
processing techniques to achieve extremely low on-resistance per
silicon area. Additional features of these Automotive qualified
HEXFET Power MOSFET's are a 150°C junction operating
temperature, fast switching speed and improved repetitive avalanche
rating. These benefits combine to make this design an extremely
efficient and reliable device for use in Automotive applications and a
wide variety of other applications.
The efficient SO-8 package provides enhanced thermal characteristics
and dual MOSFET die capability making it ideal in a variety of power
applications. This dual, surface mount SO-8 can dramatically reduce
board space and is also available in Tape & Reel.
Features
Advanced Planar Technology
Low On-Resistance
Logic Level Gate Drive
Dual P Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Lead-Free, RoHS Compliant
Automotive Qualified *
1 2015-9-30
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter Max. Units
V
DS
Drain-Source Voltage -30
V
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V -4.9
A
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ 10V -3.9
I
DM
Pulsed Drain Current -30
I
S
Continuous Source Current (Diode Conduction) -2.5
P
D
@T
A
= 25°C Maximum Power Dissipation 2.0
P
D
@T
A
= 70°C Maximum Power Dissipation 1.3
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy (Thermally Limited) 140
mJ
I
AR
Avalanche Current -2.8 A
E
AR
Repetitive Avalanche Energy 0.20 mJ
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
T
J
Operating Junction and -55 to + 150
°C
T
STG
Storage Temperature Range
W
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Thermal Resistance
Symbol Parameter Typ. Max. Units
°C/W
R
JA
Junction-to-Ambient ––– 62.5
SO-8
AUIRF7316Q
Base part number Package Type
Standard Pack
Orderable Part Number
Form Quantity
AUIRF7316Q SO-8 Tape and Reel 4000 AUIRF7316QTR
G D S
Gate Drain Source
D1
D1
D
2
D2
G1
S2
G2
S1
Top View
8
1
2
3
4
5
6
7
AUIRF7316Q
2 2015-9-30
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 11)
Starting T
J
= 25°C, L = 35mH, R
G
= 25, I
AS
= -2.8A.
I
SD
-2.8A, di/dt 150A/µs, V
DD
V
(BR)DSS
, T
J
150°C.
Pulse width 300µs; duty cycle 2%.
Surface mounted on FR-4 board , t sec.
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage -30 ––– ––– V V
GS
= 0V, I
D
= -250µA
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient ––– 0.022 ––– V/°C Reference to 25°C, I
D
= -1mA
R
DS(on)
Static Drain-to-Source On-Resistance
––– 0.042 0.058

V
GS
= -10V, I
D
= -4.9A
––– 0.076 0.098 V
GS
= -4.5V, I
D
= -3.6A
V
GS(th)
Gate Threshold Voltage -1.0 ––– -3.0 V V
DS
= V
GS
, I
D
= -250µA
gfs Forward Trans conductance ––– 7.7 ––– S V
DS
= -15V, I
D
= -4.9A
I
DSS
Drain-to-Source Leakage Current
––– ––– -1.0
µA
V
DS
= -24V, V
GS
= 0V
––– ––– -25 V
DS
= -24V,V
GS
= 0V,T
J
=55°C
I
GSS
Gate-to-Source Forward Leakage ––– ––– -100
nA
V
GS
= -20V
Gate-to-Source Reverse Leakage ––– ––– 100 V
GS
= 20V
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Total Gate Charge ––– 23 34
nC
I
D
= -4.9A
Q
gs
Gate-to-Source Charge ––– 3.8 5.7
V
DS
= -15V
Q
gd
Gate-to-Drain Charge ––– 5.9 8.9
V
GS
= -10V, See Fig.10
t
d(on)
Turn-On Delay Time ––– 13 19
ns
V
DD
= -15V
t
r
Rise Time ––– 13 20 I
D
= -1.0A
t
d(off)
Turn-Off Delay Time ––– 34 51
R
G
= 6.0
t
f
Fall Time ––– 32 48
R
D
= 15
C
iss
Input Capacitance ––– 710 –––
pF
V
GS
= 0V
C
oss
Output Capacitance ––– 380 ––– V
DS
= -25V
C
rss
Reverse Transfer Capacitance ––– 180 –––
ƒ = 1.0MHz, See Fig.5
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current
––– ––– -2.5
A
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
––– ––– -30
integral reverse
(Body Diode) p-n junction diode.
V
SD
Diode Forward Voltage ––– -0.78 -1.0 V T
J
= 25°C,I
S
= -1.7A,V
GS
= 0V 
t
rr
Reverse Recovery Time ––– 44 66 ns
T
J
= 25°C ,I
F
= -1.7A,
Q
rr
Reverse Recovery Charge ––– 42 63 nC
di/dt = 100A/µs 
AUIRF7316Q
3 2015-9-30
Fig. 2 Typical Output Characteristics
Fig. 3 Typical Transfer Characteristics
Fig. 4 Typical Source-Drain Diode
Forward Voltage
Fig. 1 Typical Output Characteristics
1
10
100
0.1 1 10
D
DS
20µs PULSE WIDTH
T = 25°C
A
-I , Drain-to-Source Current (A)
-V , Drain-to-Source Voltage (V)
J
-3.0V
VGS
TOP - 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOT TOM - 3.0 V
1
10
100
0.1 1 10
D
DS
A
-I , Drain-to-Source Current (A)
-V , Drain-to-Source Voltage (V)
-3.0V
VGS
TOP - 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOT TOM - 3.0 V
20µs PULSE WIDTH
T = 150°C
J
1
10
100
3.0 3.5 4.0 4.5 5.0 5.5 6.0
T = 25°C
T = 150°C
J
J
GS
D
A
-I , Drain-to-Source Current (A)
-V , Gate-to-Source Voltage (V)
V = -10V
20µs PULSE WIDTH
DS
1
10
100
0.4 0.6 0.8 1.0 1.2 1.4
T = 25°C
T = 150°C
J
J
V = 0V
GS
SD
SD
A
-I , Reverse Drain Current (A)
-V , Source-to-Drain Voltage (V)
P1-P3P4-P6P7-P8

AUIRF7316QTR

Mfr. #:
Buy AUIRF7316QTR
Manufacturer:
Infineon / IR
Description:
MOSFET AUTO -30V DUAL P-CH HEXFET 0.042 RDSon
Lifecycle:
New from this manufacturer.
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