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AUIRF7316QTR

P1-P3P4-P6P7-P8
AUIRF7316Q
4 2015-9-30
Fig 5. Normalized On-Resistance
Vs. Temperature
Fig 6. Typical On-Resistance Vs. Drain
Current
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
Fig. 7 Typical On-Resistance Vs. Gate Voltage
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
4.9A
25 50 75 100 125 150
0
50
100
150
200
250
300
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
I
D
TOP
BOTTOM
-1.3A
-2.2A
-2.8A
AUIRF7316Q
5 2015-9-30
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
0 10 20 30 40
0
4
8
12
16
20
Q , Total Gate Charge ( nC)
-V , Gate-to-Source Voltage (V)
G
GS
I =
D
-4.9A
V =-15V
DS
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Not es:
1. Dut y factor D = t / t
2. Peak T = P x Z + T
1 2
J DM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
0.50
SINGLE PULSE
(THERMAL RESPONSE)
AUIRF7316Q
6 2015-9-30
SO-8 Part Marking Information
SO-8 Package Outline (Dimensions are shown in millimeters (inches)
e1
D
E
y
b
A
A1
H
K
L
.189
.1497
0°
.013
.050 BASIC
.0532
.0040
.2284
.0099
.016
.1968
.1574
8°
.020
.0688
.0098
.2440
.0196
.050
4.80
3.80
0.33
1.35
0.10
5.80
0.25
0.40
0°
1.27 BASIC
5.00
4.00
0.51
1.75
0.25
6.20
0.50
1.27
MIN MAX
MILLIMETERSIN CHES
MIN MAX
DIM
8°
e
c .0075 .0098 0.19 0.25
.025 BASIC 0.635 BASIC
87
5
65
D B
E
A
e
6X
H
0.25 [.010]
A
6
7
K x 45°
8X L
8X c
y
0.25 [.010] C
AB
e1
A
A1
8X b
C
0.10 [.004]
4312
FOOTPRINT
8X 0.72 [.028]
6.46 [.255]
3X 1.27 [.050]
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
N O TES:
1. D IM EN SIO N IN G & TO LERAN C IN G PER ASM E Y14.5M -1994.
2. CONTROLLING DIM ENSION: MILLIM ETER
3. DIMENSIONS ARE SHOWN IN MILLIM ETERS [INCHES].
5 DIM EN SIO N D O ES N O T IN C LU DE M O LD PRO TRUSIO N S.
6 DIM EN SIO N D O ES N O T IN C LU DE M O LD PRO TRUSIO N S.
M O LD PRO TRU SIO N S N O T TO EXC EED 0.25 [.010].
7 D IM EN SIO N IS TH E LEN G TH O F LEAD FO R SO LD ERIN G TO
A S U B S T R A T E .
M O LD PRO TRU SIO N S N O T TO EXC EED 0.15 [.006].
8X 1.78 [.070]
P1-P3P4-P6P7-P8

AUIRF7316QTR

Mfr. #:
Buy AUIRF7316QTR
Manufacturer:
Infineon / IR
Description:
MOSFET AUTO -30V DUAL P-CH HEXFET 0.042 RDSon
Lifecycle:
New from this manufacturer.
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