2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 28, 2014
IRLML6302PbF
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage -20 V V
GS
= 0V, I
D
= -250µA
ΔV
(BR)DSS
/ΔT
J
Breakdown Voltage Temp. Coefficient -4.9 mV/°C Reference to 25°C, I
D
= -1mA
0.60 V
GS
= -4.5V, I
D
= -0.61A
0.90 V
GS
= -2.7V, I
D
= -0.31A
V
GS(th)
Gate Threshold Voltage -0.70 -1.5 V V
DS
= V
GS
, I
D
= -250µA
g
fs
Forward Transconductance 0.56 S V
DS
= -10V, I
D
= -0.31A
-1.0 V
DS
= -16V, V
GS
= 0V
-25 V
DS
= -16V, V
GS
= 0V, T
J
= 125°C
Gate-to-Source Forward Leakage -100 V
GS
= -12V
Gate-to-Source Reverse Leakage 100 V
GS
= 12V
Q
g
Total Gate Charge 2.4 3.6 I
D
= -0.61A
Q
gs
Gate-to-Source Charge 0.56 0.84 nC V
DS
= -16V
Q
gd
Gate-to-Drain ("Miller") Charge 1.0 1.5 V
GS
= -4.5V, See Fig. 6 and 9
t
d(on)
Turn-On Delay Time 13 V
DD
= -10V
t
r
Rise Time 18 I
D
= -0.61A
t
d(off)
Turn-Off Delay Time 22 R
G
= 6.2Ω
t
f
Fall Time 22 R
D
= 16Ω, See Fig. 10
C
iss
Input Capacitance 97 V
GS
= 0V
C
oss
Output Capacitance 53 pF V
DS
= -15V
C
rss
Reverse Transfer Capacitance 28 = 1.0MHz, See Fig. 5
Ω
µA
nA
I
GSS
I
DSS
Drain-to-Source Leakage Current
R
DS(ON)
Static Drain-to-Source On-Resistance
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Notes:
Repetitive rating; pulse width
limited by max. junction temperature. ( See fig. 11 )
I
SD
≤ -0.61A, di/dt ≤ 76A/µs, V
DD
≤V
(BR)DSS
,
T
J
≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t ≤ 5sec.
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode) showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– -1.2 V T
J
= 25°C, I
S
= -0.61A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 35 53 ns T
J
= 25°C, I
F
= -0.61A
Q
rr
Reverse Recovery Charge ––– 26 39 nC di/dt = -100A/μs
Source-Drain Ratings and Characteristics
A
S
D
G
-4.9
-0.54
ns
