IRLML6302TRPBF

P1-P3 P4-P6 P7-P9

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IRLML6302PbF

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

0

20

40

60

80

100

120

140

160

180

1 10 100

C, Capacitance (pF)

A

DS

-V , Drain-to-Source Voltage (V)

V = 0V, f = 1MHz

C = C + C , C SHORTED

C = C

C = C + C

GS

iss gs gd ds

rss gd

oss ds gd

C

iss

C

oss

C

rss

0

2

4

6

8

10

0.0 1.0 2.0 3.0 4.0

G

GS

A

-V , Gate-to-Source Voltage (V)

Q , Total Gate Charge (nC)

I = -0.61A

V = -16V

FOR TEST CIRCUIT

SEE FIGURE 9

D

DS

0.01

0.1

1

10

0.4 0.6 0.8 1.0 1.2 1.4

T = 25°C

T = 150°C

J

J

V = 0V

GS

SD

SD

A

-I , Reverse Drain Current (A)

-V , Source-to-Drain Voltage (V)

0.1

1

10

1 10 100

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

T = 25°C

T = 150°C

Single Pulse

A

-I , Drain Current (A)

-V , Drain-to-Source Voltage (V)

DS

D

A

J

100μs

1ms

10ms

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IRLML6302PbF

+

-

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

V

DS

90%

10%

V

GS

t

d(on)

t

r

t

d(off)

t

f

Fig 10a. Switching Time Test Circuit

Fig 10b. Switching Time Waveforms

V

DS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

R

D

V

GS

V

DD

R

G

D.U.T.

Fig 9a. Basic Gate Charge Waveform

Q

G

Q

GS

Q

GD

V

G

Charge

Fig 9b. Gate Charge Test Circuit

-4.5V

D.U.T.

V

DS

I

D

I

G

-3mA

V

GS

.3μF

50KΩ

.2μF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

+

-

-4.5V

0.1

1

10

100

1000

0.00001 0.0001 0.001 0.01 0.1 1 10 100

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

J DM thJA A

P

t

t

DM

1

2

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

1

thJA

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

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IRLML6302PbF

Peak Diode Recovery dv/dt Test Circuit

P.W.

Period

di/dt

Diode Recovery

dv/dt

Ripple ≤ 5%

Body Diode Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current

Body Diode Forward

Current

V

GS

=10V

V

DD

I

SD

Driver Gate Drive

D.U.T. I

SD

Waveform

D.U.T. V

DS

Waveform

Inductor Curent

D =

P. W .

Period

+

-

+

+

+

-

-

-







R

G

V

DD

• dv/dt controlled by R

G

• I

SD

controlled by Duty Factor "D"

• D.U.T. - Device Under Test

D.U.T

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer



* Reverse Polarity for P-Channel

** Use P-Channel Driver for P-Channel Measurements

*

V

GS

*

**

[ ]

[ ]

*** V

GS

= 5.0V for Logic Level and 3V Drive Devices

[ ] ***

Fig 13. For P-Channel HEXFETS

P1-P3 P4-P6 P7-P9

IRLML6302TRPBF

Mfr. #:

Buy IRLML6302TRPBF

Manufacturer:

Infineon Technologies

Description:

MOSFET MOSFT P-Ch -0.62A 600mOhm 2.4nC LogLvl

Lifecycle:

New from this manufacturer.

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IRLML6302TRPBF