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NGTB20N135IHRWG

P1-P3P4-P6P7-P9P10-P10
© Semiconductor Components Industries, LLC, 2017
March, 2017 − Rev. 1
1 Publication Order Number:
NGTB20N135IHR/D
NGTB20N135IHRWG
IGBT with Monolithic Free
Wheeling Diode
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on−state voltage and minimal switching loss. The IGBT is
well suited for resonant or soft switching applications.
Features
• Extremely Efficient Trench with Fieldstop Technology
• 1350 V Breakdown Voltage
• Optimized for Low Losses in IH Cooker Application
• Reliable and Cost Effective Single Die Solution
• These are Pb−Free Devices
Typical Applications
• Inductive Heating
• Consumer Appliances
• Soft Switching
ABSOLUTE MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−emitter voltage V
CES
1350 V
Collector current
@ T
C = 25°C
@ TC = 100°C
I
C
40
20
A
Pulsed collector current, T
pulse
limited by T
Jmax
, 10 ms Pulse,
V
GE
= 15 V
I
CM
120 A
Diode forward current
@ T
C = 25°C
@ TC = 100°C
I
F
40
20
A
Diode pulsed current, T
pulse
limited
by T
Jmax
, 10 ms Pulse, V
GE
= 0 V
I
FM
120 A
Gate−emitter voltage
Transient Gate−emitter Voltage
(T
pulse
= 5 ms, D < 0.10)
V
GE
$20
±25
V
Power Dissipation
@ T
C = 25°C
@ TC = 100°C
P
D
394
197
W
Operating junction temperature
range
T
J
−40 to +175 °C
Storage temperature range T
stg
−55 to +175 °C
Lead temperature for soldering, 1/8”
from case for 5 seconds
T
SLD
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
TO−247
CASE 340AL
C
G
20 A, 1350 V
V
CEsat
= 2.20 V
E
off
= 0.60 mJ
E
Device Package Shipping
ORDERING INFORMATION
NGTB20N135IHRWG TO−247
(Pb−Free)
30 Units / Rail
www.onsemi.com
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
MARKING DIAGRAM
20N135IHR
AYWWG
G
E
C
NGTB20N135IHRWG
www.onsemi.com
2
THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Thermal resistance junction−to−case
R
q
JC
0.38 °C/W
Thermal resistance junction−to−ambient
R
q
JA
40 °C/W
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter
Test Conditions Symbol Min Typ Max Unit
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
V
GE
= 0 V, I
C
= 5 mA
V
(BR)CES
1350 − − V
Collector−emitter saturation voltage V
GE
= 15 V, I
C
= 20 A
V
GE
= 15 V, I
C
= 20 A, T
J
= 175°C
V
CEsat
−
−
2.20
2.40
2.65
−
V
Gate−emitter threshold voltage
V
GE
= V
CE
, I
C
= 250 mA
V
GE(th)
4.5 5.5 6.5 V
Collector−emitter cut−off current, gate−
emitter short−circuited
V
GE
= 0 V, V
CE
= 1350 V
V
GE
= 0 V, V
CE
= 1350 V, T
J
=
175°C
I
CES
−
−
−
−
0.5
2.0
mA
Gate leakage current, collector−emitter
short−circuited
V
GE
= 20 V, V
CE
= 0 V I
GES
− − 100 nA
DYNAMIC CHARACTERISTIC
Input capacitance
V
CE
= 20 V, V
GE
= 0 V, f = 1 MHz
C
ies
− 5290 −
pF
Output capacitance C
oes
− 124 −
Reverse transfer capacitance C
res
− 100 −
Gate charge total
V
CE
= 600 V, I
C
= 20 A, V
GE
= 15 V
Q
g
− 234 −
nC
Gate to emitter charge Q
ge
− 39 −
Gate to collector charge Q
gc
− 105 −
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−off delay time
T
J
= 25°C
V
CC
= 600 V, I
C
= 20 A
R
g
= 10 W
V
GE
= 0 V/ 15V
t
d(off)
− 245 −
ns
Fall time t
f
− 175 −
Turn−off switching loss E
off
− 0.60 − mJ
Turn−off delay time
T
J
= 150°C
V
CC
= 600 V, I
C
= 20 A
R
g
= 10 W
V
GE
= 0 V/ 15V
t
d(off)
− 270 −
ns
Fall time t
f
− 290 −
Turn−off switching loss E
off
− 1.40 − mJ
DIODE CHARACTERISTIC
Forward voltage
V
GE
= 0 V, I
F
= 20 A
V
GE
= 0 V, I
F
= 20 A, T
J
= 175°C
V
F
−
−
1.80
2.70
2.10
−
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NGTB20N135IHRWG
www.onsemi.com
3
TYPICAL CHARACTERISTICS
250
Figure 1. Output Characteristics Figure 2. Output Characteristics
V
CE
, COLLECTOR−EMITTER VOLTAGE (V) V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
543210
Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics
V
CE
, COLLECTOR−EMITTER VOLTAGE (V) V
GE
, GATE−EMITTER VOLTAGE (V)
131050
160
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
V
GE
= 20 to 15 V
T
J
= 25°C
10 V
9 V
8 V
7 V
543210
250
I
C
, COLLECTOR CURRENT (A)
V
GE
= 20 to 15 V
T
J
= 150°C
10 V
9 V
8 V
7 V
I
C
, COLLECTOR CURRENT (A)
V
GE
= 20 to 15 V
T
J
= −40°C
10 V
9 V
8 V
T
J
= 25°C
T
J
= 150°C
11 V
11 V
7 V
876
11 V
678
543210876
140
120
100
80
60
40
20
0
1234 67 89 1211
Figure 5. V
CE(sat)
vs. T
J
T
J
, JUNCTION TEMPERATURE (°C)
3.00
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
75500−25−50−75 200175100
I
C
= 40 A
I
C
= 20 A
I
C
= 10 A
2.50
2.00
1.50
1.00
0.50
0.00
25 125 150
Figure 6. Typical Capacitance
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
1007050100
100000
C, CAPACITANCE (pF)
C
ies
C
oes
C
res
20 30 40 60 9080
T
J
= 25°C
200
150
100
50
0
13 V
13 V
200
150
100
50
0
13 V
250
200
150
100
50
0
10000
1000
100
10
1
P1-P3P4-P6P7-P9P10-P10

NGTB20N135IHRWG

Mfr. #:
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Manufacturer:
ON Semiconductor
Description:
IGBT Transistors 1350V/20A IGBT FSII TO-24
Lifecycle:
New from this manufacturer.
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