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NGTB20N135IHRWG
P1-P3
P4-P6
P7-P9
P10-P10
NGTB20N135IHRWG
www
.onsemi.com
4
TYPICAL CHARACTERISTICS
Figure 7. Diode Forward Characteristics
V
F
, FORW
ARD VOL
T
AGE (V)
3.0
2.5
2.0
1.5
1.0
0.5
0
70
I
F
, FORW
ARD CURRENT (A)
T
J
= 25
°
C
T
J
= 150
°
C
60
50
40
30
20
10
0
Figure 8. T
ypical Gate Charge
Q
G
, GA
TE CHARGE (nC)
150
100
50
0
V
GE
, GA
TE−EMITTER VOL
T
AGE (V)
250
200
V
CE
= 600 V
V
GE
= 15 V
I
C
= 20
A
16
14
12
10
8
6
4
2
0
3.5
4.0
Figure 9. Switching Loss vs. T
emperature
T
J
, JUNCTION TEMPERA
TURE (
°
C)
140
120
100
80
60
40
20
0
0
0.2
0.4
0.6
0.8
1.0
SWITCHING LOSS (mJ)
160
V
CE
= 600 V
V
GE
= 15 V
I
C
= 20 A
Rg = 10
W
1.2
E
off
Figure 10. Switching Time vs. T
emperature
T
J
, JUNCTION TEMPERA
TURE (
°
C)
140
120
100
80
60
40
20
0
10
100
1000
SWITCHING TIME (ns)
160
V
CE
= 600 V
V
GE
= 15 V
I
C
= 20 A
Rg = 10
W
t
f
t
d(off)
Figure 1
1. Switching Loss vs. I
C
I
C
, COLLECTOR CURRENT (A)
5
SWITCHING LOSS (mJ)
6
5
4
3
2
1
0
20
80
65
35
50
V
CE
= 600 V
V
GE
= 15 V
T
J
= 150
°
C
Rg = 10
W
E
off
Figure 12. Switching Time vs. I
C
I
C
, COLLECTOR CURRENT (A)
100
SWITCHING TIME (ns)
52
0
8
0
65
35
50
10
t
f
t
d(off)
V
CE
= 600 V
V
GE
= 15 V
T
J
= 150
°
C
Rg = 10
W
1.4
7
1000
NGTB20N135IHRWG
www
.onsemi.com
5
TYPICAL CHARACTERISTICS
Figure 13. Switching Loss vs. R
g
R
G
, GA
TE RESISTOR (
W
)
45
35
25
15
5
1.8
SWITCHING LOSS (mJ)
55
65
V
CE
= 600 V
V
GE
= 15 V
T
J
= 150
°
C
I
C
= 20
A
75
85
E
off
V
CE
= 600 V
V
GE
= 15 V
T
J
= 150
°
C
I
C
= 20
A
Figure 14. Switching Time vs. R
g
R
G
, GA
TE RESISTOR (
W
)
45
35
25
15
5
10000
SWITCHING TIME (ns)
55
65
75
85
1000
100
10
t
f
t
d(off)
Figure 15. Switching Loss vs. V
CE
V
CE
, COLLECTOR−EMITTER VOL
T
AGE (V)
450
400
350
300
250
1.6
SWITCHING LOSS (mJ)
500
700
750
800
1.4
1.2
1
0.8
0.6
0.4
0.2
0
550
600
650
I
C
= 20
A
V
GE
= 15 V
T
J
= 150
°
C
Rg = 10
W
E
off
V
CE
, COLLECTOR−EMITTER VOL
T
AGE (V)
550
500
450
300
250
SWITCHING TIME (ns)
600
650
750
800
1000
100
10
350
400
Figure 16. Switching Time vs. V
CE
I
C
= 20
A
V
GE
= 15 V
T
J
= 150
°
C
Rg = 10
W
t
d(off)
t
f
Figure 17. Safe Operating Area
V
CE
, COLLECTOR−EMITTER VOL
T
AGE (V)
I
C
, COLLECTOR CURRENT (A)
1000
100
10
1
0.01
0.1
1
10
100
1000
50
m
s
100
m
s
1 ms
dc operation
Single Nonrepetitive
Pulse T
C
= 25
°
C
Curves must be derated
linearly with increase
in temperature
Figure 18. Reverse Bias Safe Operating Area
V
CE
, COLLECTOR−EMITTER VOL
T
AGE (V)
I
C
, COLLECTOR CURRENT (A)
1000
100
10
1
1
10
100
1000
V
GE
= 15 V
, T
C
= 125
°
C
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
1.8
700
NGTB20N135IHRWG
www
.onsemi.com
6
TYPICAL CHARACTERISTICS
140
0.01
FREQUENCY (kHz)
Ipk (A)
0.1
1
10
100
1000
120
100
80
60
40
20
0
Figure 19. Collector Current vs. Switching
Frequency
T
C
= 1
10
°
C
T
C
= 80
°
C
V
CE
= 600 V
, T
J
≤
175
°
C, R
gate
= 10
W
,
V
GE
= 0/15 V
, T
case
= 80
°
C or 1
10
°
C
(as noted), D = 0.5
1650
−40
T
J
, JUNCTION TEMPERA
TURE (
°
C)
V
(BR)CES
(V)
Figure 20. T
ypical V
(BR)CES
vs. T
emperature
135
110
85
60
35
10
−15
1600
1550
1500
1450
1400
1350
1300
0.001
0.01
0.1
1
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
1
0
Figure 21. IGBT T
ransient Thermal Impedance
PULSE TIME (sec)
R(t) (
°
C/W)
50% Duty Cycle
20%
10%
5%
2%
Single Pulse
R
q
JC
= 0.385
Junction
Case
C
1
C
2
R
1
R
2
R
n
C
i
=
t
i
/R
i
Duty Factor = t
1
/t
2
Peak T
J
= P
DM
x Z
q
JC
+ T
C
C
n
t
i
(sec)
0.000174
0.025884
0.001398
0.002971
0.006046
R
i
(
°
C/W)
0.005757
0.000122
0.007153
0.010643
0.016539
0.006505
0.048615
0.051225
0.019522
0.198582
0.015924
0.1931
15
0.051783
1.23097
0.025689
0.553364
0.180713
P1-P3
P4-P6
P7-P9
P10-P10
NGTB20N135IHRWG
Mfr. #:
Buy NGTB20N135IHRWG
Manufacturer:
ON Semiconductor
Description:
IGBT Transistors 1350V/20A IGBT FSII TO-24
Lifecycle:
New from this manufacturer.
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NGTB20N135IHRWG