Audio, Dual-Matched
NPN Transistor
Data Sheet
MAT12
Rev. A
Document Feedbac
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700 ©2010–2014 Analog Devices, Inc. All rights reserved.
Technical Support www.analog.com
FEATURES
Very low voltage noise: 1 nV/√Hz maximum at 100 Hz
Excellent current gain match: 0.5% typical
Low offset voltage (V
OS
): 200 μV maximum
Outstanding offset voltage drift: 0.03 μV/°C typical
High gain bandwidth product: 200 MHz
PIN CONFIGURATION
NOTE
1. SUBSTRATE IS CONNECTED
TO CASE ON TO-78 PACKAGE.
. SUBSTRATE IS NORMALLY
CONNECTED TO THE MOS
NEGATIVE CIRCUIT POTENTIAL,
BUT CAN BE FLOATED.
09044-001
C
1
E
1
B
1
C
2
E
2
B
2
1
6
2
5
3
4
Figure 1. 6-Lead TO-78
GENERAL DESCRIPTION
The MAT12 is a dual, NPN-matched transistor pair that is
specifically designed to meet the requirements of ultralow
noise audio systems.
With its extremely low input base spreading resistance (rbb'
is typically 28 Ω) and high current gain (h
FE
typically exceeds
600 at I
C
= 1 mA), the MAT12 can achieve outstanding signal-
to-noise ratios. The high current gain results in superior
performance compared to systems incorporating commercially
available monolithic amplifiers.
Excellent matching of the current gain (Δh
FE
) to about 0.5%
and low V
OS
of less than 10 μV typical make the MAT12 ideal
for symmetrically balanced designs, which reduce high-order
amplifier harmonic distortion.
Stability of the matching parameters is guaranteed by protection
diodes across the base emitter junction. These diodes prevent
degradation of beta and matching characteristics due to reverse
biasing of the base emitter junction.
The MAT12 is also an ideal choice for accurate and reliable
current biasing and mirroring circuits. Furthermore, because
the accuracy of a current mirror degrades exponentially with
mismatches of V
BE
between transistor pairs, the low V
OS
of
the MAT12 does not need offset trimming in most circuit
applications.
The MAT12 is a good replacement for the MAT02, and its
performance and characteristics are guaranteed over the
extended temperature range of −40°C to +85°C.
