MAT12AHZ Datasheet MAT12AHZ | P4-P6

Data Sheet MAT12

Rev. A | Page 3 of 12

SPECIFICATIONS

ELECTRICAL CHARACTERISTICS

V

CB

= 15 V, I

O

= 10 µA, T

A

= 25°C, unless otherwise specified.

Table 1.

Parameter Symbol Test Conditions/Comments Min Typ Max Unit

DC AND AC CHARACTERISTICS

Current Gain

1

h

FE

I

C

= 1 mA 300 605

−40°C ≤ T

A

≤ +85°C 300

I

C

= 10 µA

200

550

−40°C ≤ T

A

≤ +85°C 200

Current Gain Match

2

Δh

FE

10 µA ≤ I

C

≤ 1 mA 0.5 5 %

Noise Voltage Density

3

e

N

I

C

= 1 mA, V

CB

= 0 V

f

O

= 10 Hz 1.6 2 nV/√Hz

f

O

= 100 Hz 0.9 1 nV/√Hz

f

O

= 1 kHz 0.85 1 nV/√Hz

f

O

= 10 kHz 0.85 1 nV/√Hz

Low Frequency Noise (0.1 Hz to 10 Hz) e

N

p-p I

C

= 1 mA 0.4 µV p-p

Offset Voltage V

OS

V

CB

= 0 V, I

C

= 1 mA 10 200 µV

−40°C ≤ T

A

≤ +85°C 220 µV

Offset Voltage Change vs. V

CB

ΔV

OS

/ΔV

CB

0 V ≤ V

CB

≤ V

MAX

4

,1 µA ≤ I

C

≤ 1 mA

5

10

50

µV

Offset Voltage Change vs. I

C

ΔV

OS

/ΔI

C

1 µA ≤ I

C

≤ 1 mA

5

, V

CB

= 0 V 5 70 µV

Offset Voltage Drift ΔV

OS

/ΔT −40°C ≤ T

A

≤ +85°C 0.08 1 µV/°C

−40°C ≤ T

A

≤ +85°C, V

OS

trimmed to 0 V 0.03 0.3 µV/°C

Breakdown Voltage, Collector to Emitter BV

CEO

40 V

Gain Bandwidth Product f

T

I

C

= 10 mA, V

CE

= 10 V 200 MHz

Collector-to-Base Leakage Current I

CBO

V

CB

= V

MAX

25 500 pA

−40°C ≤ T

A

≤ +85°C 3 nA

Collector-to-Collector Leakage Current

6, 7

I

CC

V

CC

= V

MAX

35 500 pA

−40°C ≤ T

A

≤ +85°C 4 nA

Collector-to-Emitter Leakage Current

6, 7

I

CES

V

CE

= V

MAX

, V

BE

= 0 V 35 500 pA

−40°C ≤ T

A

≤ +85°C

4

nA

Input Bias Current I

B

I

C

= 10 µA 50 nA

−40°C ≤ T

A

≤ +85°C 50 nA

Input Offset Current I

OS

I

C

= 10 µA 6.2 nA

−40°C ≤ T

A

≤ +85°C 13 nA

Input Offset Current Drift

6

ΔI

OS

/ΔT I

C

= 10 µA, −40°C ≤ T

A

≤ +85°C 40 150 pA/°C

Collector Saturation Voltage

V

CE (SAT )

I

C

= 1 mA, I

B

= 100 µA

0.05

0.2

V

Output Capacitance C

OB

V

CB

= 15 V, I

E

= 0 µA 23 pF

Bulk Resistance

6

R

BE

10 µA ≤ I

C

≤ 10 mA 0.3 1.6 Ω

Collector-to-Collector Capacitance C

CC

V

CC

= 0 V 35 pF

1

Current gain is guaranteed with collector-to-base voltage (V

CB

) swept from 0 V to V

MAX

at the indicated collector currents.

2

Current gain match (Δh

FE

) is defined as follows: Δh

FE

= (100(ΔI

B

)(h

FE min

)/I

C

).

3

Noise voltage density is guaranteed, but not 100% tested.

4

This is the maximum change in V

OS

as V

CB

is swept from 0 V to 40 V.

5

Measured at I

C

= 10 µA and guaranteed by design over the specified range of I

C

.

6

Guaranteed by design.

7

I

CC

and I

CES

are verified by the measurement of I

CBO

.

MAT12 Data Sheet

Rev. A | Page 4 of 12

ABSOLUTE MAXIMUM RATINGS

Table 2.

Parameter Rating

Breakdown Voltage of

Collector-to-Base Voltage (BV

CBO

)

40 V

Breakdown Voltage of

Collector-to-Emitter Voltage (BV

CEO

)

40 V

Breakdown Voltage of

Collector-to-Collector Voltage (BV

CC

)

40 V

Breakdown Voltage of

Emitter-to-Emitter Voltage (BV

EE

)

40 V

Collector Current (I

C

) 20 mA

Emitter Current (I

E

) 20 mA

Storage Temperature Range −65°C to +150°C

Operating Temperature Range −40°C to +85°C

Junction Temperature Range −65°C to +150°C

Lead Temperature (Soldering, 60 sec) 300°C

Stresses above those listed under Absolute Maximum Ratings

may cause permanent damage to the device. This is a stress

rating only; functional operation of the device at these or any

other conditions above those indicated in the operational

section of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect

device reliability.

THERMAL RESISTANCE

θ

JA

is specified for the worst-case conditions, that is, a device

soldered in a circuit board for surface-mount packages.

Table 3. Thermal Resistance

Package Type θ

JA

θ

JC

Unit

6-Lead TO-78 150 45 °C/W

ESD CAUTION

Data Sheet MAT12

Rev. A | Page 5 of 12

TYPICAL PERFORMANCE CHARACTERISTICS

T

A

= 25°C, V

CE

= 5 V, unless otherwise specified.

CH1 2.00V

M4.00s

A CH1 15.8V

1

CH1 4.92V p-p

09044-002

Figure 2. Low Frequency Noise (0.1 Hz to 10 Hz), I

C

= 1 mA, Gain = 10,000,000

1k

0.1

1

10

100

0.1 1 10 100 1k 10k 100k

NOISE VOLTAGE DENSITY (nV/ Hz)

FREQUENCY (Hz)

I

C

= 1mA TEST

I

C

= 10µA TEST

I

C

= 1µA TEST

09044-003

Figure 3. Noise Voltage Density vs. Frequency

100

0

20

40

60

80

0.001 10.10.01

TOTAL NOISE (nV/ Hz)

COLLECTOR CURRENT, I

C

(mA)

R

S

= 100kΩ

R

S

= 10kΩ

R

S

= 1kΩ

09044-004

Figure 4. Total Noise vs. Collector Current, f = 1 kHz

900

800

700

600

500

400

300

200

100

0.001 10.10.01

CURRENT GAIN (h

FE

)

COLLECTOR CURRENT (mA)

T

A

= +25°C

T

A

= –55°C

T

A

= +125°C

09044-005

Figure 5. Current Gain vs. Collector Current (V

CB

= 0 V)

900

800

700

600

500

400

300

200

0

100

–100

–50 0

50 100 150

CURRENT GAIN (h

FE

)

TEMPERATURE (°C)

1mA

1µA

09044-006

Figure 6. Current Gain vs. Temperature (Excludes I

CBO

)

0.70

0.65

0.60

0.55

0.50

0.45

0.40

0.35

0.30

0.001 0.01 0.1 1 10

BASE EMITTER VOLTAGE, V

BE

(V)

COLLECTOR CURRENT, I

C

(mA)

V

CE

= 5V

09044-007

Figure 7. Base Emitter Voltage vs. Collector Current

MAT12AHZ

MAT12AHZ

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