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74HCT174N,652

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18
74HC_HCT174 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 3 — 16 April 2013 4 of 18
NXP Semiconductors
74HC174; 74HCT174
Hex D-type flip-flop with reset; positive-edge trigger
6. Functional description
[1] H = HIGH voltage level;
h = HIGH voltage level one set-up time prior to the LOW-to-HIGH clock transition;
L = LOW voltage level;
l = LOW voltage level one set-up time prior to the LOW-to-HIGH clock transition;
X = don’t care;
= LOW-to-HIGH clock transition.
7. Limiting values
[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] For DIP16 package: above 70 C the value of P
tot
derates linearly with 12 mW/K.
[3] For SO16 package: above 70 C the value of P
tot
derates linearly with 8 mW/K.
For SSOP16 and TSSOP16 packages: above 60 C the value of P
tot
derates linearly with 5.5 mW/K.
Table 3. Function table
[1]
Operating modes Inputs Outputs
MR CP Dn Qn
reset (clear) L X X L
load “1” H hH
load “0” H lL
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V)
Symbol Parameter Conditions Min Max Unit
V
CC
supply voltage 0.5 +7 V
I
IK
input clamping current V
I
< 0.5 V or V
I
>V
CC
+0.5V
[1]
- 20 mA
I
OK
output clamping current V
O
< 0.5 V or V
O
>V
CC
+0.5V
[1]
- 20 mA
I
O
output current 0.5 V < V
O
< V
CC
+0.5V - 25 mA
I
CC
supply current - 50 mA
I
GND
ground current 50 - mA
T
stg
storage temperature 65 +150 C
P
tot
total power dissipation T
amb
= 40 C to +125 C
DIP16 package
[2]
- 750 mW
SO16, SSOP16 and TSSOP16
[3]
- 500 mW
74HC_HCT174 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 3 — 16 April 2013 5 of 18
NXP Semiconductors
74HC174; 74HCT174
Hex D-type flip-flop with reset; positive-edge trigger
8. Recommended operating conditions
9. Static characteristics
Table 5. Recommended operating conditions
Voltages are referenced to GND (ground = 0 V)
Symbol Parameter Conditions 74HC174 74HCT174 Unit
Min Typ Max Min Typ Max
V
CC
supply voltage 2.0 5.0 6.0 4.5 5.0 5.5 V
V
I
input voltage 0 - V
CC
0-V
CC
V
V
O
output voltage 0 - V
CC
0-V
CC
V
T
amb
ambient temperature 40 - +125 40 - +125 C
t/V input transition rise and fall rate V
CC
= 2.0 V - - 625 - - - ns/V
V
CC
= 4.5 V - 1.67 139 - 1.67 139 ns/V
V
CC
= 6.0 V - - 83 - - - ns/V
Table 6. Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions 25 C 40 C to +85 C 40 C to +125 C Unit
Min Typ Max Min Max Min Max
74HC174
V
IH
HIGH-level
input voltage
V
CC
= 2.0 V 1.5 1.2 - 1.5 - 1.5 - V
V
CC
= 4.5 V 3.15 2.4 - 3.15 - 3.15 - V
V
CC
= 6.0 V 4.2 3.2 - 4.2 - 4.2 - V
V
IL
LOW-level
input voltage
V
CC
= 2.0 V - 0.8 0.5 - 0.5 - 0.5 V
V
CC
= 4.5 V - 2.1 1.35 - 1.35 - 1.35 V
V
CC
= 6.0 V - 2.8 1.8 - 1.8 - 1.8 V
V
OH
HIGH-level
output voltage
V
I
= V
IH
or V
IL
I
O
= 20 A; V
CC
= 2.0 V 1.9 2.0 - 1.9 - 1.9 - V
I
O
= 20 A; V
CC
= 4.5 V 4.4 4.5 - 4.4 - 4.4 - V
I
O
= 20 A; V
CC
= 6.0 V 5.9 6.0 - 5.9 - 5.9 - V
I
O
= 4.0 mA; V
CC
= 4.5 V 3.98 4.32 - 3.84 - 3.7 - V
I
O
= 5.2 mA; V
CC
= 6.0 V 5.48 5.81 - 5.34 - 5.2 - V
V
OL
LOW-level
output voltage
V
I
= V
IH
or V
IL
I
O
= 20 A; V
CC
= 2.0 V - 0 0.1 - 0.1 - 0.1 V
I
O
= 20 A; V
CC
= 4.5 V - 0 0.1 - 0.1 - 0.1 V
I
O
= 20 A; V
CC
= 6.0 V - 0 0.1 - 0.1 - 0.1 V
I
O
= 4.0 mA; V
CC
= 4.5 V - 0.15 0.26 - 0.33 - 0.4 V
I
O
= 5.2 mA; V
CC
= 6.0 V - 0.16 0.26 - 0.33 - 0.4 V
I
I
input leakage
current
V
I
= V
CC
or GND;
V
CC
=6.0V
--0.1 - 1-1 A
I
CC
supply current V
I
= V
CC
or GND; I
O
=0A;
V
CC
=6.0V
- - 8.0 - 80 - 160 A
74HC_HCT174 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 3 — 16 April 2013 6 of 18
NXP Semiconductors
74HC174; 74HCT174
Hex D-type flip-flop with reset; positive-edge trigger
10. Dynamic characteristics
C
I
input
capacitance
-3.5- - - - -pF
74HCT174
V
IH
HIGH-level
input voltage
V
CC
= 4.5 V to 5.5 V 2.0 1.6 - 2.0 - 2.0 - V
V
IL
LOW-level
input voltage
V
CC
= 4.5 V to 5.5 V - 1.2 0.8 - 0.8 - 0.8 V
V
OH
HIGH-level
output voltage
V
I
= V
IH
or V
IL
; V
CC
= 4.5 V
I
O
= 20 A 4.4 4.5 - 4.4 - 4.4 - V
I
O
= 4.0 mA 3.98 4.32 - 3.84 - 3.7 - V
V
OL
LOW-level
output voltage
V
I
= V
IH
or V
IL
; V
CC
= 4.5 V
I
O
= 20 A; V
CC
= 4.5 V - 0 0.1 - 0.1 - 0.1 V
I
O
= 5.2 mA; V
CC
= 5.5 V - 0.15 0.26 - 0.33 - 0.4 V
I
I
input leakage
current
V
I
= V
CC
or GND;
V
CC
=5.5V
--0.1 - 1-1 A
I
CC
supply current V
I
= V
CC
or GND; I
O
=0A;
V
CC
=5.5V
- - 8.0 - 80 - 160 A
I
CC
additional
supply current
per input pin;
V
I
=V
CC
2.1 V;
other inputs at V
CC
or GND;
V
CC
= 4.5 V to 5.5 V
Dn input - 25 90 - 112.5 - 122.5 A
CP input - 130 468 - 585 - 637 A
MR
input - 125 450 - 562.5 - 612.5 A
C
I
input
capacitance
-3.5- - - - -pF
Table 6. Static characteristics
…continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions 25 C 40 C to +85 C 40 C to +125 C Unit
Min Typ Max Min Max Min Max
Table 7. Dynamic characteristics
GND (ground = 0 V); C
L
= 50 pF unless otherwise specified; for test circuit, see Figure 9
Symbol Parameter Conditions 25 C 40 C to +85 C 40 C to +125 C Unit
Min Typ Max Min Max Min Max
74HC174
t
pd
propagation
delay
CP to Qn; see Figure 7
[1]
V
CC
= 2.0 V - 55 165 - 205 - 250 ns
V
CC
= 4.5 V - 20 33 - 41 - 50 ns
V
CC
= 5.0 V; C
L
=15pF - 17 - - - - - ns
V
CC
= 6.0 V - 16 28 - 35 - 43 ns
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18

74HCT174N,652

Mfr. #:
Buy 74HCT174N,652
Manufacturer:
NXP Semiconductors
Description:
Flip Flops HEX D F/F MASTER RST
Lifecycle:
New from this manufacturer.
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